Open Access. Powered by Scholars. Published by Universities.®
Nanoscience and Nanotechnology Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 5 of 5
Full-Text Articles in Nanoscience and Nanotechnology
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry relies on CMOS technology which is nearing its scaling limitations. In order to continue the historical growth rate of the device density of digital logic chips, novel nanomaterials and nanodevices will need to be developed.
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Legacy Theses & Dissertations (2009 - 2024)
Characteristics of III-nitride based heterojunction devices are greatly influenced by the presence of high density of polarization induced interface charges. Research undertaken in the current doctoral thesis demonstrates the effect of presence of one, three and six sheets of polarization induced charges in three different III-nitride based devices, namely in a photocathode, a high electron mobility transistor (HEMT) and a hyperspectral detector structure. Through a systematic set of experiments and theoretical modeling an in-depth study of the interaction between multiple sheets of polarization induced charges and their impact on energy band profile was undertaken. Various device designs were studied and …
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
Legacy Theses & Dissertations (2009 - 2024)
The evolution of the Atomic Force Microscope (AFM) into the Magnetic Force Microscope (MFM) and Magnetic Resonance Force Microscope (MRFM) has had a substantial impact on the characterization of nanoscale phenomena. Detection of 10-17 Newtons per root Hertz has occurred with use of an ultra-sensitive cantilever along with optical interferometry methods within these geometries. The sensitivity of these platforms is dependent on the characteristics of the cantilever, where increased length and a low Young's modulus increase the force sensitivity (meters/Newtons). Using IC fabrication techniques, the realization of generating cantilevers with this sensitivity is feasible, but stress compensation layers are required …