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Full-Text Articles in Nanoscience and Nanotechnology
Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo
Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo
Theses and Dissertations
This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO2) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO3). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film …
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport …