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Articles 1 - 9 of 9
Full-Text Articles in Nanoscience and Nanotechnology
Towards Building A Prototype Spin-Logic Device, Ashish Verma Penumatcha
Towards Building A Prototype Spin-Logic Device, Ashish Verma Penumatcha
Open Access Dissertations
Since the late 1980s, several key discoveries, such as Giant and Tunneling Magne- toresistance, and advances in magnetic materials have paved the way for exponentially higher bit-densities in magnetic storage. In particular, the discovery of Spin-Transfer Torque (STT) has allowed information to be written to individual magnets using spin-currents. This has replaced the more traditional Oersted-field control used in field-MRAMs and allowed further scaling of magnetic-memories. A less obvious con- sequence of STT is that it has made possible a logic-technology based on magnets controlled by spin-polarized currents. Charge-coupled Spin Logic (CSL) is one such device proposal that couples a …
Nanophotonics For Dark Materials, Filters, And Optical Magnetism, Mengren Man
Nanophotonics For Dark Materials, Filters, And Optical Magnetism, Mengren Man
Open Access Dissertations
Research on nanophotonic structures for three application areas is described, a near perfect optical absorber based on a graphene/dielectric stack, an ultraviolet bandpass filter formed with an aluminum/dielectric stack, and structures exhibiting homogenizable magnetic properties at infrared frequencies. The graphene stack can be treated as a effective, homogenized medium that can be designed to reflect little light and absorb an astoundingly high amount per unit thickness, making it an ideal dark material and providing a new avenue for photonic devices based on two-dimensional materials. Another material stack arrangement with thin layers of metal and insulator forms a multi-cavity filter that …
Laser Direct Written Silicon Nanowires For Electronic And Sensing Applications, Woongsik Nam
Laser Direct Written Silicon Nanowires For Electronic And Sensing Applications, Woongsik Nam
Open Access Dissertations
Silicon nanowires are promising building blocks for high-performance electronics and chemical/biological sensing devices due to their ultra-small body and high surface-to-volume ratios. However, the lack of the ability to assemble and position nanowires in a highly controlled manner still remains an obstacle to fully exploiting the substantial potential of nanowires. Here we demonstrate a one-step method to synthesize intrinsic and doped silicon nanowires for device applications. Sub-diffraction limited nanowires as thin as 60 nm are synthesized using laser direct writing in combination with chemical vapor deposition, which has the advantages of in-situ doping, catalyst-free growth, and precise control of position, …
Advanced Iii-V / Si Nano-Scale Transistors And Contacts: Modeling And Analysis, Seung Hyun Park
Advanced Iii-V / Si Nano-Scale Transistors And Contacts: Modeling And Analysis, Seung Hyun Park
Open Access Dissertations
The exponential miniaturization of Si CMOS technology has been a key to the electronics revolution. However, the continuous downscaling of the gate length becomes the biggest challenge to maintain higher speed, lower power, and better electrostatic integrity for each following generation. Hence, novel devices and better channel materials than Si are considered to improve the metal-oxide-semiconductor field-effect transistors (MOSFETs) device performance. III-V compound semiconductors and multi-gate structures are being considered as promising candidates in the next CMOS technology. III-V and Si nano-scale transistors in different architectures are investigated (1) to compare the performance between InGaAs of III-V compound semiconductors and …
Dynamic Control Of Plasmonic Resonances With Graphene Based Nanostructures, Naresh Kumar Emani
Dynamic Control Of Plasmonic Resonances With Graphene Based Nanostructures, Naresh Kumar Emani
Open Access Dissertations
Light incident on a metallic structure excites collective oscillations of electrons termed as plasmons. These plasmons are useful in control and manipulation of information in nanoscale dimensions and at high operating frequencies. Hence, the field of plasmonics opens up the possibility of developing nanoscale optoelectronic circuitry for computing and sensing applications. One of the challenges in this effort is the lack of tunable plasmonic resonance. Currently, the resonant wavelength of plasmonic structure is fixed by the material and structural parameters. Post-fabrication dynamic control of a plasmonic resonance is rather limited.^ In this thesis we explore the combination of optoelectrical properties …
Design And Analysis Of Solar Cells By Coupled Electrical - Optical Simulation, Xufeng Wang
Design And Analysis Of Solar Cells By Coupled Electrical - Optical Simulation, Xufeng Wang
Open Access Dissertations
Careful electrical design and optical design are both crucial for achieving high-efficiency solar cells. It is common to link these two aspects serially; the optical design is first done to minimize reflection and maximize light trapping, and then the resulting optical generation rate is input to the electrical simulation. For very high efficiency solar cells that approach the Shockley-Queisser limit, however, electrical and optical transports are tightly coupled in both directions. Photons generated by radiative recombination can be reabsorbed to create additional electron-hole pairs (so-called photon recycling), which decreases losses. A variety of novel photon management schemes are currently being …
Solar Cell Temperature Dependent Efficiency And Very High Temperature Efficiency Limits, John Robert Wilcox
Solar Cell Temperature Dependent Efficiency And Very High Temperature Efficiency Limits, John Robert Wilcox
Open Access Dissertations
Clean renewable solar energy is and will continue to be a critically important source of electrical energy. Solar energy has the potential of meeting all of the world's energy needs, and has seen substantial growth in recent years. Solar cells can convert sun light directly into electrical energy, and much progress has been made in making them less expensive and more efficient. Solar cells are often characterized and modeled at 25 °C, which is significantly lower than their peak operating temperature. In some thermal concentrating systems, solar cells operate above 300 °C. Since increasing the temperature drastically affects the terminal …
Non-Silicon Mosfets And Circuits With Atomic Layer Deposited Higher-K Dielectrics, Lin Dong
Non-Silicon Mosfets And Circuits With Atomic Layer Deposited Higher-K Dielectrics, Lin Dong
Open Access Dissertations
The quest for technologies beyond 14nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on higher-k gate dielectrics integration with high mobility channel materials such as III-V semiconductors and germanium. Ternary oxides, such as La2-xYxO3 and LaAlO3, have been considered as strong candidates due to their high dielectric constants and good thermal stability. Meanwhile, the unique abilities of delivering large area uniform thin film, excellent controlling of composition and thickness to an atomic level, which are keys to ultra-scaled devices, have made atomic layer deposition (ALD) technique an excellent choice.
In this thesis, we systematically study the atomic …
Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis On Silicon Substrate, Sung Hwan Chung
Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis On Silicon Substrate, Sung Hwan Chung
Open Access Dissertations
Semiconductor nanowires synthesized via the vapor-liquid-solid (VLS) mechanism have attracted extensive research interest in recent years owing to their unique structure as a promising candidate for the future electronic devices. Germanium and silicon nanowires, in particular, are compatible with the current silicon-based technology via direct assembly. However, one of the main challenges for the successful nanowire application in large-scale is the lack of the method for obtaining nanowires in desired positions and directions. Therefore, the comprehensive, systematic understanding of epitaxial nanowire growth and the more suitable method to align nanowires on novel structure are required. In this work, the synthesis …