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Full-Text Articles in Nanoscience and Nanotechnology

Development And Demonstration Of A Processing And Assembly Pathway For A 3d-Synchronous Field Programmable Gate Array, Robert Carroll Jan 2019

Development And Demonstration Of A Processing And Assembly Pathway For A 3d-Synchronous Field Programmable Gate Array, Robert Carroll

Legacy Theses & Dissertations (2009 - 2024)

Field Programmable Gate Arrays (FPGA) are integrated circuits which can implement virtually any digital function and can be configured by a designer after manufacturing. This is beneficial when dedicated application specific runs are not time or cost effective; however, this flexibility comes at the cost of a substantially higher interconnect overhead. Three-dimensional (3D) integration can offer significant improvements in the FPGA architecture by stacking multiple device layers and interconnecting them in the third or vertical dimension, through the substrate, where path lengths are greatly reduced. This will allow for a higher density of devices and improvements in power consumption, signal …


Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras Jan 2019

Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras

Legacy Theses & Dissertations (2009 - 2024)

One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.


Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song Jan 2019

Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song

Legacy Theses & Dissertations (2009 - 2024)

Molybdenum disulfide (MoS2) is a semiconducting 2D layered material that has attracted a lot of attention due to its material properties for electronics and optoelectronics device applications. These include a layer-dependent band gap, an indirect to direct energy transition at monolayer state, and strong light-matter interaction. A large majority of 2D materials and devices have been studied through micromechanical exfoliation for extraction and electron beam lithography for device fabrication. These methodologies while able to generate high quality materials and precisely fabricated devices, are not suitable for large scale production. Efforts have been made to make MoS2 and other 2D materials …