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Ocean Engineering Commons

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Computer Engineering

Conductivity

2017

Articles 1 - 2 of 2

Full-Text Articles in Ocean Engineering

Study On Semiconductor Properties Of Acetylide-Thiourea Fabricated Onto Interdigitated Electrodes (Ides) Platform Towards Application In Gas Sensing Technology, Adibah Izzati Daud, Wan M. Khairul, M. I. N. Isa, Khairul Anuar Abdul Wahid Dec 2017

Study On Semiconductor Properties Of Acetylide-Thiourea Fabricated Onto Interdigitated Electrodes (Ides) Platform Towards Application In Gas Sensing Technology, Adibah Izzati Daud, Wan M. Khairul, M. I. N. Isa, Khairul Anuar Abdul Wahid

Makara Journal of Technology

In the past few decades, the unique properties of acetylide and thiourea moieties individually have attracted great attention from researchers in various fields to be developed in numerous applications in advanced materials technology, especially as an active layer in gas sensing devices. The molecular systems of acetylide and thiourea provide a wide range of electronic properties as they possess rigid π-systems in their designated structures. In this study, a derivative of acetylide-thiourea featuring N-(4[4-aminophenyl] ethynyl benzonitrile)-N’-(4-ethyl benzoyl) thiourea (TCN) has been synthesised with the general formula of ArC(O)NHC(S)NHC≡C)Ar adopted the system of D-π-A for the significant development of conductive materials. …


Assessment On Heck-Immine Derivatives As Organic Semiconductor Materials, Rafizah Rahamathullah, Lim Keemi, Wan M. Khairul Dec 2017

Assessment On Heck-Immine Derivatives As Organic Semiconductor Materials, Rafizah Rahamathullah, Lim Keemi, Wan M. Khairul

Makara Journal of Technology

This paper reports the synthetic, characterization and theoretical evaluation of new class of hybrid Heck-immine system involving mixed moieties of vinylene (C=C) and azomethines (CH=N) which has been successfully integrated into an addition of organic semiconducting materials. The assessment of 4-[(hexyloxyphenyl)methylene]amino)-4’-chloro-stilbene (HEXCS) based on Donor (D)-π-Acceptor (A) was evaluated as active semiconductor material candidates via several spectroscopic and analytical techniques. In turn, the investigation of its potential as dopant system in conductive film was successfully deposited on indium tin oxide (ITO) coated substrate via spin coating method. The relationship between electronic and optical properties, chemical modelling at molecular interactions and …