Mechanical Engineering Commons^™

Thermo-Piezo-Electro-Mechanical Simulation Of Algan (Aluminum Gallium Nitride) / Gan (Gallium Nitride) High Electron Mobility Transistor, Lorin E. Stevens

All Graduate Theses and Dissertations, Spring 1920 to Summer 2023

Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern …