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University of Arkansas, Fayetteville
Graduate Theses and Dissertations
Drain engineering;Hot carrier effects;Low doped drain;Low voltage NMOSFET;SiC CMOS scaling;Submicron 4H-SiC
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Advanced Cmos Process For Submicron Silicon Carbide (Sic) Device, Niloy Saha
Advanced Cmos Process For Submicron Silicon Carbide (Sic) Device, Niloy Saha
Graduate Theses and Dissertations
Silicon carbide (SiC) is a wide semiconductor material with superior material properties compared to other rival materials. Due to its fewer dislocation defects than gallium nitride and its ability to form native oxides, this material possesses an advantage among wide band gap materials. Despite having several superior properties its low voltage application is less explored. CMOS is extremely important in low voltage areas and silicon is the dominant player in it for the last 50 years where scaling has contributed a major role in this flourishment. The channel length of silicon devices has reached 3 nm whereas SiC is still …