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Full-Text Articles in Mechanical Engineering
Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada
Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada
Theses and Dissertations
Micro-Raman (µRaman) spectroscopy is an efficient, non-destructive technique widely used to determine the quality of semiconductor materials and microelectromechanical systems. This work characterizes the stress distribution in wurtzite gallium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. This wide bandgap semiconductor material is being considered by the Air Force Research Laboratory for the fabrication of shock-hardened MEMS accelerometers. µRaman spectroscopy is particularly useful for stress characterization because of its ability to measure the spectral shifts in Raman peaks in a material, and correlate those shifts to stress and strain. The spectral peak shift as a function of stress, …
Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli
Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli
Theses and Dissertations
Micro-Raman (µ-Raman) spectroscopy is used to measure residual stress in two silicon carbide (SiC) poly-types: single-crystal, hexagonally symmetric 6H-SiC, and polycrystalline, cubic 3C-SiC thin films deposited on Si substrates. Both are used in micro-electrical-mechanical systems (MEMS) devices. By employing an incorporated piezoelectric stage with submicron positioning capabilities along with the Raman spectral acquisition, spatial scans are performed to reveal areas in the 6H-SiC MEMS structures that contain residual stress. Shifts in the transverse optical (TO) Stokes peaks of up to 2 cm-1 are correlated to the material strain induced by the MEMS fabrication process through the development of phonon …
Characterization Of Residual Stress In Microelectromechanical Systems (Mems) Devices Using Raman Spectroscopy, Lavern A. Starman
Characterization Of Residual Stress In Microelectromechanical Systems (Mems) Devices Using Raman Spectroscopy, Lavern A. Starman
Theses and Dissertations
Due to the small scale of MEMS devices, the inherent residual stresses during the deposition processes can affect the functionality and reliability of the fabricated devices. Residual stress often causes device failure due to curling, buckling, or fracture. Currently, few techniques are available to measure the residual stress in MEMS devices. In this dissertation, Raman spectroscopy is used to measure and monitor the residual and induced stresses in MUMPs polysilicon MEMS devices. Raman spectroscopy was selected since it is nondestructive, fast, and provides potential in situ stress monitoring. Raman spectroscopy scans on unreleased and released MEMS fixed-fixed beams, cantilevers, and …