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Silicon Oxide Micromodule Capacitors, W. B. Nowak, J. J. O'Connor
Silicon Oxide Micromodule Capacitors, W. B. Nowak, J. J. O'Connor
Welville B. Nowak
Silicon oxide capacitors have been developed on micromodule wafers (0.310-in. sq. with three termination notches per side). Each microelement contains 1, 2, 3, or 4 capacitors with values of 1120 and 560, 180, 100 and 68 pf per capacitor, respectively. The 1120 pf capacitor is double layered. In addition to the general requirements of microelements and micromodules, some of the more important specifications these capacitors must meet are: dissipation factor (DF) not exceeding 0.015, insulation resistance (IR) at 50 volts exceeding 10,000 megohms (25°C) and 750 megohms (125°c), 50 WVDC and 150 volts dielectric withstanding voltage (DWV), Δ C not …