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Articles 1 - 10 of 10
Full-Text Articles in Mechanical Engineering
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
Piezoelectric Aluminum Nitride Nanoelectromechanical Actuators, Nipun Sinha, Graham Wabiszewski, Rashed Mahameed, Valery Felmetsger, Shawn Tanner, Robert Carpick, Gianluca Piazza
Piezoelectric Aluminum Nitride Nanoelectromechanical Actuators, Nipun Sinha, Graham Wabiszewski, Rashed Mahameed, Valery Felmetsger, Shawn Tanner, Robert Carpick, Gianluca Piazza
Nipun Sinha
This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nanoactuators. The films exhibit an average piezoelectric coefficient (d31~−1.9 pC/N), which is comparable to its microscale counterpart. This allows vertical deflections as large as 40 nm from 18 µm long and 350 nm thick multilayer cantilever bimorph beams with 2 V actuation. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. The films exhibit leakage currents lower than 2 nA/cm2 at 1 V, and have an average relative dielectric constant of approximately 9.2 (as in thicker films). These material …
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
Dna-Decorated Carbon Nanotubes As Sensitive Layer For Aln Contour-Mode Resonant-Mems Gravimetric Sensor, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, Timothy S. Jones, A T. Johnson, Gianluca Piazza
Dna-Decorated Carbon Nanotubes As Sensitive Layer For Aln Contour-Mode Resonant-Mems Gravimetric Sensor, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, Timothy S. Jones, A T. Johnson, Gianluca Piazza
Matteo Rinaldi
In this work a nano-enabled gravimetric chemical sensor prototype based on single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNT) as nano-functionalization layer for Aluminun Nitride (AIN) contour-mode resonant-MEMS gravimetric sensors has been demonstrated. Two resonators fabricated on the same silicon chip and operating at different resonance frequencies, 287 and 450 MHz, were functionalized with this novel bio-coating layer to experimentally prove the capability of two distinct single strands of DNA bound to SWNT to enhance differently the adsorption of volatile organic compounds such as dinitroluene (DNT, simulant for explosive vapor) and dymethyl-methylphosphonate (DMMP, a simulant for nerve agent sarin). The …
Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza
Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza
Matteo Rinaldi
A nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same die have also …
5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza
5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza
Matteo Rinaldi
This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical …
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) Super High Frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) Aluminum Nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt2, in excess of …
Integration Of Aln Micromechanical Contour-Mode Technology Filters With Three-Finger Dual Beam Aln Mems Switches, Nipun Sinha, Rashed Mahameed, Chengjie Zuo, Gianluca Piazza
Integration Of Aln Micromechanical Contour-Mode Technology Filters With Three-Finger Dual Beam Aln Mems Switches, Nipun Sinha, Rashed Mahameed, Chengjie Zuo, Gianluca Piazza
Nipun Sinha
In this paper, we present the first demonstration of the monolithic integration of Aluminum Nitride (AlN) micromechanical contour mode technology filters with dual-beam actuated MEMS AlN switches. This integration has lead to the development of the first prototype of a fully-integrated all-mechanical switchable filter. Integration has been demonstrated by using AlN contour-mode MEMS filters at two center frequencies, i.e. 98.7 and 279.9 MHz. The micromechanical switch design used here is a novel three-finger dual-beam topology that improves the isolation and insertion loss of the switch by decreasing the parasitic coupling between the DC and RF signals over a previous AlN …
Body-Biased Complementary Logic Implemented Using Aln Piezoelectric Mems Switches, Nipun Sinha, Timothy S. Jones, Zhijun Guo, Gianluca Piazza
Body-Biased Complementary Logic Implemented Using Aln Piezoelectric Mems Switches, Nipun Sinha, Timothy S. Jones, Zhijun Guo, Gianluca Piazza
Nipun Sinha
This paper reports on the first implementation of low voltage complementary logic (< 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a ± 1.5 V voltage swing.
Ultra Thin Aln Piezoelectric Nano-Actuators, Nipun Sinha, Graham E. Wabiszewski, Rashed Mahameed, Valery V. Felmetsger, Shawn M. Tanner, Robert W. Carpick, Gianluca Piazza
Ultra Thin Aln Piezoelectric Nano-Actuators, Nipun Sinha, Graham E. Wabiszewski, Rashed Mahameed, Valery V. Felmetsger, Shawn M. Tanner, Robert W. Carpick, Gianluca Piazza
Nipun Sinha
This paper reports the first implementation of ultra thin (100 nm) Aluminum Nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nano-actuators. An average piezoelectric coefficient (d31~ 1.9 pC/N) that is comparable to its microscale counterpart has been demonstrated in nanoscale thin AlN films. Vertical deflections as large as 40 nm have been obtained in 18 μm long and 350 nm thick cantilever beams under bimorph actuation with 2 V. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. Leakage current lower than 2 nA/cm2 at 1 V has been recorded and an average relative dielectric constant of …