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Full-Text Articles in Mechanical Engineering
Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim
Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim
Faculty Publications
Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro-robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is …
Magneto-Exothermic Catalytic Chemical Reaction Along A Curved Surface, Muhammad Ashraf, Uzma Ahmad, Saqib Zia, Rama S. R. Gorla, Amnah S. Al-Johani, Ilyas Khan, Mulugeta Andualem
Magneto-Exothermic Catalytic Chemical Reaction Along A Curved Surface, Muhammad Ashraf, Uzma Ahmad, Saqib Zia, Rama S. R. Gorla, Amnah S. Al-Johani, Ilyas Khan, Mulugeta Andualem
Faculty Publications
In the current study, the physical behavior of the boundary layer flows along a curved surface owing exothermic catalytic chemical reaction, and the magnetic field is investigated. The mathematical model comprised of a part of momentum, energy, and mass equations, which are solved using a finite difference method along with primitive variable formulation. Numerical solutions, using the method of quantitative differentiation, are made with the appropriate choice of dimensionless parameters. Analysis of the results obtained shows that the field temperature and flow of fluids are strongly influenced by the combined effects of catalytic chemical reactions and the magnetic field. The …
Improved Sensitivity Mems Cantilever Sensor For Terahertz Photoacoustic Spectroscopy, Ronald A. Coutu Jr., Ivan R. Medvedev, Douglas T. Petkie
Improved Sensitivity Mems Cantilever Sensor For Terahertz Photoacoustic Spectroscopy, Ronald A. Coutu Jr., Ivan R. Medvedev, Douglas T. Petkie
Faculty Publications
In this paper, a microelectromechanical system (MEMS) cantilever sensor was designed, modeled and fabricated to measure the terahertz (THz) radiation induced photoacoustic (PA) response of gases under low vacuum conditions. This work vastly improves cantilever sensitivity over previous efforts, by reducing internal beam stresses, minimizing out of plane beam curvature and optimizing beam damping. In addition, fabrication yield was improved by approximately 50% by filleting the cantilever’s anchor and free end to help reduce high stress areas that occurred during device fabrication and processing. All of the cantilever sensors were fabricated using silicon-on-insulator (SOI) wafers and tested in a custom …
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Faculty Publications
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …