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Full-Text Articles in Mechanical Engineering
The Dissipated Power In Atomic Force Microscopy Due To Interactions With A Capillary Fluid Layer, Nicole N. Hashemi, M.R. Paul, H. Dankowicz, W. Jhe
The Dissipated Power In Atomic Force Microscopy Due To Interactions With A Capillary Fluid Layer, Nicole N. Hashemi, M.R. Paul, H. Dankowicz, W. Jhe
Nastaran Hashemi
We study the power dissipated by the tip of an oscillating micron-scale cantilever as it interacts with a sample using a nonlinear model of the tip-surface force interactions that includes attractive, adhesive, repulsive, and capillary contributions. The force interactions of the model are entirely conservative and the dissipated power is due to the hysteretic nature of the interaction with the capillary fluid layer. Using numerical techniques tailored for nonlinear and discontinuous dynamical systems we compute the exact dissipated power over a range of experimentally relevant conditions. This is accomplished by computing precisely the fraction of oscillations that break the fluid …
Structural Characterization Of Aluminum Films Deposited On Sputtered-Titanium Nitride/ Silicon Substrate By Metalorganic Chemical Vapor Deposition From Dimethylethylamine Alane, Xiaodong Li, Byoung-Youp Kim, Shi-Woo Rhee
Structural Characterization Of Aluminum Films Deposited On Sputtered-Titanium Nitride/ Silicon Substrate By Metalorganic Chemical Vapor Deposition From Dimethylethylamine Alane, Xiaodong Li, Byoung-Youp Kim, Shi-Woo Rhee
Faculty Publications
Alfilmsdeposited on sputtered‐TiN/Si substrate by metalorganic chemical vapor deposition(MOCVD) from dimethylethylamine alane (DMEAA) were characterized using x‐ray diffraction(XRD),Auger electron spectroscopy(AES),atomic force microscopy(AFM), and transmission electron microscopy (TEM). The TiN filmsputtered on the Si has a preferred orientation along the growth direction with the 〈111〉 of the film parallel to the Si〈111〉. Sputtering of the TiN film on the Si induced strains at the interface. The TiN/Si interface is flat while the Al/TiN interface is rough. There exist many dislocations at the Al/TiN interface. The Al2O3 phase was formed at the Al/TiN interface during the early stages of …