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Low Pressure Chemical Vapor Deposition Of Boron Nitride Thin Films From Triethylamine Borane Complex And Ammonia, Narahari Ramanuja

Theses

Boron nitride thin films were synthesized on Silicon and quartz substrates by low pressure chemical vapor deposition using triethylamine-borane complex and ammonia as precursors. The films were processed at 550°C, 575°C and 600°C at a constant pressure of 0.05 Torr at different precursor flow rates and flow ratios.

Several analytical methods such as Fourier transform infrared spectroscopy, x- ray photo-electron spectroscopy, ultra-violet/visible spectrophotornetry, ellipsometry, surface profilometry and scanning electron microscopy were used to study the deposited films. The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The stresses in …