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Articles 1 - 11 of 11

Full-Text Articles in Materials Science and Engineering

Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana Dec 2010

Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana

UNLV Theses, Dissertations, Professional Papers, and Capstones

The interface formation between two different materials is important in applications for optoelectronic devices. Often, the success or performance of these devices is dependent on the formation of these heterojunctions. In this work, the surface and interfaces in such materials for optoelectronic devices are investigated by a suite of X-ray analytical techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), and X-ray emission (XES) spectroscopies to provide novel insight.

For the group III-nitrides (e.g., AlxGa1-xN) used in many light emitting devices, a significant challenge exists to form an Ohmic contact. The electron affinities and band gaps of GaN and …


All Solid-State Mid-Ir Laser Development, Nonlinear Absorption Investigation And Laser-Induced Damage Study, Torrey J. Wagner Sep 2010

All Solid-State Mid-Ir Laser Development, Nonlinear Absorption Investigation And Laser-Induced Damage Study, Torrey J. Wagner

Theses and Dissertations

In this research, nonlinear optical absorption coefficients and laser-induced damage thresholds are measured in Ge and GaSb, which are materials that are used in IR detectors. Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, two-photon and free-carrier absorption coefficients are measured in Ge and GaSb at 2.05 and 2.5 μm for the first time. At these wavelengths, nonlinear absorption is the primary damage mechanism, and damage thresholds at picosecond and nanosecond pulse widths were measured and agreed well with modeled thresholds using experimentally measured parameters. The damage threshold for a single-layer Al …


Elastic And Magnetic Properties Of Tb6fe(Sb,Bi)2 Using Resonant Ultrasound Spectroscopy., David Michael Mccarthy Aug 2010

Elastic And Magnetic Properties Of Tb6fe(Sb,Bi)2 Using Resonant Ultrasound Spectroscopy., David Michael Mccarthy

Masters Theses

Tb6FeSb2 and Tb6FeBi2 are novel rare earth compounds with little prior research. These compounds show high and variable curie temperatures for rare-earth compounds. This has lead to a literature review which includes the discussion of: elasticity, resonance, and magnetism. This review is used to discuss the theory and methodology which can relate these various properties to each other. Furthermore, synthesis, x-ray analysis, and RUS sample preparation of Tb6FeSb2 and Tb6FeBi2 were completed.

Resonant Ultrasound Spectroscopy (RUS) elastic studies were taken for Tb6FeSb2 and Tb6FeBi2 as a function temperature from 5-300K, in various magnetic fields ranging from 0-9T. Tb6FeSb2’s and Tb6FeBi2’s …


Hard Collisions In Rubidium Using Sub-Doppler Spectroscopy, Douglas E. Thornton Mar 2010

Hard Collisions In Rubidium Using Sub-Doppler Spectroscopy, Douglas E. Thornton

Theses and Dissertations

To better understand the laser kinetics of an alkali gain medium, hard collisions, or velocity-changing collisions, has been studied and a velocity-changing collisional rate has been calculated. Previous works have studied these collisions, but no rate has been calculated. Using the precise tool of sub-Doppler spectroscopy, atomic hard collisions can be observed. The collected spectra are fitted with two different line shapes to demonstrate the accuracy of this method. From the fits, the number of hard collisions can be extracted. The time scale of the hard collisions in rubidium is interpolated by varying the chopping frequency of the pump beam, …


Afm-Patterned 2-D Thin-Film Photonic Crystal Analyzed By Complete Angle Scatter, Nicholas C. Herr Mar 2010

Afm-Patterned 2-D Thin-Film Photonic Crystal Analyzed By Complete Angle Scatter, Nicholas C. Herr

Theses and Dissertations

The purpose of this research was to use an atomic force microscope (AFM) to generate a 2-D square array of sub-wavelength surface features from a single material over a region large enough to permit optical characterization. This work is an extension of previous AFIT nano-patterning work and is in response to the small subunit sizes demanded for the production of optical metamaterials and photonic crystals. A diamond nano-indentation AFM probe was used to produce a 325-μm by 200-μm array of indentations in a 120-nm thick polystyrene film deposited on silicon. Indentation spacing of 400 nm produced well-defined surface features with …


Optical And Electrical Characterization Of Bulk Grown Indium-Gallium-Arsenide Alloys, Austin C. Bergstrom Mar 2010

Optical And Electrical Characterization Of Bulk Grown Indium-Gallium-Arsenide Alloys, Austin C. Bergstrom

Theses and Dissertations

Advances in crystal growth techniques have allowed increased quality in growth of bulk ternary InxGa1-xAs. Here, the optical and electrical properties of samples grown through the vertical Bridgman (or multi-component zone melting growth) method have been investigated through photoluminescence spectroscopy and Hall effect measurements. Indium mole fractions varied from 0.75 for 1. Hall effect measurements at temperatures ranging from 10 to 300 K revealed moderate n-type doping with carrier concentrations ranging from 1.5 to 9.6×1016 cm-3 at 10 to 15 K. Carriers from deep donor levels became appreciable between 50 and 100 K. Hall …


Rubidium Recycling In A High Intensity Short Duration Pulsed Alkali Laser, Wooddy S. Miller Mar 2010

Rubidium Recycling In A High Intensity Short Duration Pulsed Alkali Laser, Wooddy S. Miller

Theses and Dissertations

Laser induced fluorescence was used to study how pump pulse duration and alkali recycle time effects maximum power output in a Diode Pumped Alkali Laser (DPAL) system. A high intensity short pulsed pump source was used to excited rubidium atoms inside a DPAL-type laser. The maximum output power of the laser showed a strong dependence upon the temporal width of the pump pulse in addition to the input pump intensity. A linear relationship was observed between the maximum output power and the pulse width due to the effective lifetime of the excited state, defined as the time it takes for …


Electro-Optic And Magneto-Dielectric Properties Of Multifunctional Nitride And Oxide Materials, Ambesh Dixit Jan 2010

Electro-Optic And Magneto-Dielectric Properties Of Multifunctional Nitride And Oxide Materials, Ambesh Dixit

Wayne State University Dissertations

ABSTRACT

Materials that simultaneously exhibit different physical properties provide a rich area of research leading to the development of new devices. For example, materials having a strong coupling between charge and spin degrees of freedom are essential to realizing a new class of devices referred to generally as spintronics. However, these multifunctional systems pose new scientific challenges in understanding the origin and mechanisms for cross-control of different functionalities. The core of this Ph.D. dissertation deals with multifunctional nitride and oxide compound semiconductors as well as multiferroic magnetic oxide systems by investigating structural, optical, electrical, magnetic, magnetodielectric and magnetoelectric properties.

Thin …


An Ab-Initio Study Of The Elastic Properties Of Important Group Iv Diborides At High Temperatures, Manny Gonzales Jan 2010

An Ab-Initio Study Of The Elastic Properties Of Important Group Iv Diborides At High Temperatures, Manny Gonzales

Open Access Theses & Dissertations

Presented is an ab-initio Molecular Dynamics (MD) study, employing the Density Functional Theory (DFT), of the lattice parameter, thermal expansion coefficients and elastic constants of ZrB2, TiB2 and HfB2 as a function of temperature. The MD trajectories provide the equilibrium lattice parameters at finite temperatures, and the gradient of the energy from these equilibrium solutions is then used to calculate the components of the stiffness tensor. The results for ZrB2 are shown to agree well with reported experimental results for the lattice parameters and elastic constants as a function of temperature.


Spectroscopic Study Of The Inhibition Of Calcium Oxalate Calculi By Larrea Tridentata, Luis Alonso Pinales Jan 2010

Spectroscopic Study Of The Inhibition Of Calcium Oxalate Calculi By Larrea Tridentata, Luis Alonso Pinales

Open Access Theses & Dissertations

The causes of urolithiasis include such influences as diet, metabolic disorders, and genetic factors which have been documented as sources that aggravate urinary calculi depositions and aggregations, and, implicitly, as causes of urolithiasis. This study endeavors to detail the scientific mechanisms involved in calcium oxalate calculi formation, and, more importantly, their inhibition under growth conditions imposed by the traditional medicinal approach using the herbal extract, Larrea tridentata. The calculi were synthesized without and with Larrea tridentata infusion by employing the single diffusion gel technique. A visible decrease in calcium oxalate crystal growth with increasing amounts of Larrea tridentata herbal infusion …


Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di Jan 2010

Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di

Legacy Theses & Dissertations (2009 - 2024)

The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …