Materials Science and Engineering Commons^™

Plasma Enhanced Atomic Layer Deposition Of Cu Seed Layers At Low Process Temperatures, Jiajun Mao

Legacy Theses & Dissertations (2009 - 2024)

In conventional Cu interconnect fabrication, a sputtered copper seed layer is deposited before the electrochemically deposited (ECD) copper plating step. However, as interconnect dimensions scale down, non-conformal seed layer growth and subsequent voiding of metallized structures is becoming a critical issue. With its established excellent thickness controllability and film conformality, atomic layer deposition (ALD) is becoming an attractive deposition approach for the sub-24nm fabrication regime. However, in order to achieve a smooth and continuous seed layer deposition, a low process temperature (below 100oC) is needed, given the tendency of Cu agglomeration at elevated temperature. In this research, plasma enhanced ALD …