Materials Science and Engineering Commons^™

Heteroepitaxy Of Gasb On Gaas (111)A For Electron Transport Studies, Madison Drake

Boise State University Theses and Dissertations

III-V semiconductors grown by molecular beam epitaxy (MBE) on (111) surfaces have some interesting electronic properties. For certain materials with a (111)-orientation, the Γ- and L-valleys are reasonably close in energy. This means that it may be possible to take advantage of electron conduction in the L- and Γ-valleys at the same time, allowing us to overcome the so-called “density-of-states bottleneck,” and enable transistors with large drive currents.¹ We have investigated this phenomenon in GaSb- and InAs-based 2D electron gases for which the electron effective masses are low.

However, growth of materials with a (111) orientation is typically more …