Materials Science and Engineering Commons^™

Economic Advantages Of Dry-Etched Black Silicon In Passivated Emitter Rear Cell (Perc) Photovoltaic Manufacturing, Chiara Modanese, Hannu S. Laine, Toni P. Pasanen, Hele Savin, Joshua M. Pearce

Department of Materials Science and Engineering Publications

Industrial Czochralski silicon (Cz-Si) photovoltaic (PV) efficiencies have routinely reached >20% with the passivated emitter rear cell (PERC) design. Nanostructuring silicon (black-Si) by dry-etching decreases surface reflectance, allows diamond saw wafering, enhances metal gettering, and may prevent power conversion efficiency degradation under light exposure. Black-Si allows a potential for >20% PERC cells using cheaper multicrystalline silicon (mc-Si) materials, although dry-etching is widely considered too expensive for industrial application. This study analyzes this economic potential by comparing costs of standard texturized Cz-Si and black mc-Si PERC cells. Manufacturing sequences are divided into steps, and costs per unit power are individually calculated …