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Full-Text Articles in Materials Science and Engineering
Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov
Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov
Kirill Belashchenko Publications
A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching
Comparison Of Plume Dynamics For Laser Ablated Metals: Al And Ti, William A. Bauer, Glen P. Perram, Timothy Haugan
Comparison Of Plume Dynamics For Laser Ablated Metals: Al And Ti, William A. Bauer, Glen P. Perram, Timothy Haugan
Faculty Publications
Emissive plumes from pulsed laser ablation of bulk Ti and Al from KrF laser irradiation at laser fluence up to 3.5 J/cm2 and argon background pressures of 0–1 Torr have been observed using gated intensified charged-coupled device imagery. Mass loss for Ti increases from 0.1 to 0.8 μg/pulse as pulse energy increase from 174 to 282 mJ/pulse (35–170 photons/atom) and decreases by ∼30% as pressure increases from vacuum to 1 Torr. Early plume energies are described by the free expansion velocities of 1.57 ± 0.02 and of 1.81 ± 0.07 cm/μs for Ti and Al, respectively, …
Nanostructural Origin Of Semiconductivity And Large Magnetoresistance In Epitaxial Nico2O4/Al2O3 Thin Films, Congmian Zhen, Xiaozhe Zhang, Wengang Wei, Wenzhe Guo, Ankit Pant, Xiaoshan Xu, Jian Shen, Li Ma, Denglu Hou
Nanostructural Origin Of Semiconductivity And Large Magnetoresistance In Epitaxial Nico2O4/Al2O3 Thin Films, Congmian Zhen, Xiaozhe Zhang, Wengang Wei, Wenzhe Guo, Ankit Pant, Xiaoshan Xu, Jian Shen, Li Ma, Denglu Hou
Xiaoshan Xu Papers
Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the …
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
When doped with copper ions, lithium borate materials are candidates for use in radiation dosimeters. Copper-doped lithium tetraborate (Li2B4O7) crystals have been widely studied, but little is known thus far about copper ions in lithium triborate (LiB3O5) crystals. In the present investigation, Cu+ ions (3d10) were diffused into an undoped LiB3O5 crystal at high temperature. These ions occupy both Li+ and interstitial positions in the crystal. A photoluminescence (PL) band peaking near 387 nm and a photoluminescence excitation (PLE) band peaking near 273 nm verify that a portion of these Cu+ ions are located at regular Li+ sites. After an …
Saw Assisted Domain Wall Motion In Co/Pt Multilayers, Westin Edrington, Uday Singh, Maya Abo Dominguez, James Rehwaldt Alexander, Rabindra Nepal, Shireen Adenwalla
Saw Assisted Domain Wall Motion In Co/Pt Multilayers, Westin Edrington, Uday Singh, Maya Abo Dominguez, James Rehwaldt Alexander, Rabindra Nepal, Shireen Adenwalla
Shireen Adenwalla Papers
The motion of domain walls in thin ferromagnetic films is of both fundamental and technological interest. In particular, the ability to use drivers other than magnetic fields to control the positions of domain walls could be exciting for memory applications. Here, we show that high frequency dynamic strain produced by surface acoustic waves is an efficient driver of magnetic domain walls in ferromagnetic films with perpendicular anisotropy. A standing surface acoustic wave of resonant frequency 96.6MHz increases the domain wall velocities in thin films of [Co/Pt]n by an order of magnitude compared to magnetic fields alone. This effect is highly …