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Electrical and Computer Engineering

Selected Works

2017

Articles 1 - 5 of 5

Full-Text Articles in Materials Science and Engineering

S41598-017-16744-0.Pdf, Zlatan Aksamija Nov 2017

S41598-017-16744-0.Pdf, Zlatan Aksamija

Zlatan Aksamija

No abstract provided.

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Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija, Amin Salehi-Khojin, Cameron J. Foss, Arnab K. Majee, Fatemeh Khalili-Araghi Jul 2017

Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija, Amin Salehi-Khojin, Cameron J. Foss, Arnab K. Majee, Fatemeh Khalili-Araghi

Zlatan Aksamija

In many device architectures based on 2D materials, a major part of the heat generated in hot-spots dissipates in the through-plane direction where the interfacial thermal resistances can significantly restrain the heat removal
capability of the device. Despite its importance, there is an enormous (1–2 orders of magnitude) disagreement in the literature on the interfacial thermal transport characteristics of MoS2 and other transition metal dichalcogenides (TMDs) (0.1–14 MW m−2 K−1). In this report, the thermal boundary conductance (TBC) across MoS2 and graphene monolayers with SiO2/Si and sapphire substrates is systematically investigated using a
custom-made electrical thermometry platform followed by 3D …

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Highly Directional Receiver And Source Antennas Using Photonic Band Gap Crystals, Rana Biswas, Gary L. Tuttle, Ekmel Ozbay, Burak Temelkuran, Mihail Sigalas, Kai-Ming Ho Jun 2017

Highly Directional Receiver And Source Antennas Using Photonic Band Gap Crystals, Rana Biswas, Gary L. Tuttle, Ekmel Ozbay, Burak Temelkuran, Mihail Sigalas, Kai-Ming Ho

Gary Tuttle

A directional antenna made with photonic band gap structures has been presented. The directional antenna is formed with two photonic band gap structures oriented back to back and separated from each other by a distance to form a resonant cavity between the photonic band gap structures. An antenna element is placed in the resonant cavity. The resonant frequency of the cavity is tuned by adjusting the distance between the photonic band gap structures. The resonant cavity can be asymmetrical or symmetrical.

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Weak Anti-Localization And Quantum Oscillations Of Surface States In Topological Insulator Bi2se2te, Lihong Bao, Liang He, Nicholas R. Meyer, Xufeng Kou, Peng Zhang, Zhi-Gang Chen, Alexei V. Fedorov, Trevor M. Riedemann, Thomas A. Lograsso, Kang L. Wang, Gary Tuttle, Faxian Xiu Jun 2017

Weak Anti-Localization And Quantum Oscillations Of Surface States In Topological Insulator Bi2se2te, Lihong Bao, Liang He, Nicholas R. Meyer, Xufeng Kou, Peng Zhang, Zhi-Gang Chen, Alexei V. Fedorov, Trevor M. Riedemann, Thomas A. Lograsso, Kang L. Wang, Gary Tuttle, Faxian Xiu

Gary Tuttle

Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi2Se2Te crystals. Angle-resolved photoemission spectroscopy measurements on cleaved Bi2Se2Te crystals show a well-defined linear dispersion without intersection of the conduction band. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherent length shows a power-law dependence with temperature ( ∼T−0.44), indicating the presence of the surface states. …

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Impact Of Mismatch Angle On Electronic Transport Across Grain Boundaries And Interfaces In 2d Materials, Zlatan Aksamija Dec 2016

Impact Of Mismatch Angle On Electronic Transport Across Grain Boundaries And Interfaces In 2d Materials, Zlatan Aksamija

Zlatan Aksamija

We study the impact of grain boundaries (GB) and misorientation angles between grains on electronic
transport in 2-dimensional materials. Here we have developed a numerical model based on the firstprinciples
electronic bandstructure calculations in conjunction with a method which computes electron
transmission coefficients from simultaneous conservation of energy and momentum at the interface to
essentially evaluate GB/interface resistance in a Landauer formalism. We find that the resistance across
graphene GBs vary over a wide range depending on misorientation angles and type of GBs, starting
from 53 Ω μm for low-mismatch angles in twin (symmetric) GBs to about 1020 Ω μm …

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