Open Access. Powered by Scholars. Published by Universities.®
Materials Science and Engineering Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Materials Science and Engineering
Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson
Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson
Symposium of Student Scholars
This research delves into the significant impact of varying thicknesses of the Al2O3 passivation layer on the thermal stability and crystalline quality of GaN on Si structures, an essential aspect for the next generation of high-temperature electronic and optoelectronic devices. By adopting metal-organic chemical vapor deposition (MOCVD) for the growth process, we analyzed structures with different Al2O3 passivation layer thicknesses: none, 2 nm, 10 nm, and 20 nm, each built upon the GaN layer. Through Raman spectroscopy, we meticulously assessed the changes in the E2 (High) phonon mode's peak position and full width …
Reducing Switching Noise And Losses In Two-Stage Electric Power Converters, Abhijeet Prem
Reducing Switching Noise And Losses In Two-Stage Electric Power Converters, Abhijeet Prem
Student Research Symposium
Advancements in semiconductor devices are enabling the design of better electrical power converter systems. Wide Bandgap (WBG) switching devices from Silicon Carbide and Gallium Nitride can operate at high temperatures, voltages, and frequencies with faster turn-on/off periods, improving converter performance over silicon devices. However, WBG technology is still new, and the rapid switching transitions of these devices lead to issues such as voltage overshoots, ringing, and electromagnetic interference, which need to be addressed for widespread adoption. This work introduces a new control method for reshaping the switching voltages, which overcomes the disadvantages of fast transition time without increasing the system's …