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Engineering Science and Materials Commons

Open Access. Powered by Scholars. Published by Universities.®

1995

Chemical vapor deposition.

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Full-Text Articles in Engineering Science and Materials

Synthesis Of Boron Nitride/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Chenna Ravindranath Oct 1995

Synthesis Of Boron Nitride/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Chenna Ravindranath

Theses

Since the advent of the idea of ultrafiltration, microporous membranes have come through a long way in establishing a niche as an efficient technology for gas separation applications. More and more research is aimed at reducing pore size towards nanolevels, when separation factor is the criterion rather than the permeability. This work is focused at synthesizing and characterizing microporous inorganic membranes for gas separations by molecular sieving. BN was deposited on mesoporous vycor tubes using triethylamine borane complex (TEAB) and ammonia as precursors. Effect of temperature and deposition geometry on permeability of various gases has been studied. Very high selectivities …


Low Pressure Chemical Vapor Deposition Of Tungsten As An Absorber For X-Ray Masks, Hongyu Chen Oct 1995

Low Pressure Chemical Vapor Deposition Of Tungsten As An Absorber For X-Ray Masks, Hongyu Chen

Theses

Tungsten film is one of promising materials for X-ray absorber in X-ray Lithography technology because of its high X-ray absorption and refractory properties. This study focus on CVD method to make tungsten film for X-ray absorber.

In this work, a cold wall, single wafer, Spectrum 211 CVD reactor was used for the deposition of tungsten from H, and WF6. The growth kinetics were determined as a function of temperature, pressure and flow ratio. The deposition rate of as deposited tungsten films was found to follow an Arrehnius behavior in the range of 300-500°C with an activation energy of 55.7 kJ/mol. …


Low Pressure Chemical Vapor Deposition Of Copper Films From Cu(I)(Hfac)(Tmvs), Wei-Shang King Jan 1995

Low Pressure Chemical Vapor Deposition Of Copper Films From Cu(I)(Hfac)(Tmvs), Wei-Shang King

Theses

Recently, copper has been found as a possible substitute for Al alloys because of its low resistivity (1.67 μΩ • cm) and potentially improved resistance to electromigration. Conventional physical vapor deposition (PVD) method do not provide the conformal deposition profile for the high density integrated circuit, therefore, chemical vapor deposition (CVD) has become the most promising method for the resulting conformal profile.

In this work, a cold wall, single wafer, CVD tungsten reactor was used for the deposition of copper with Cu(I)(hfac)(tmvs). Film growth rates were between 100 to 800 A/min depending on processing conditions, and an Arrhenius type activation …


Synthesis Of Silicon Oxide/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Abhijit Datta Jan 1995

Synthesis Of Silicon Oxide/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Abhijit Datta

Theses

This study is focused on development of highly selective ceramic membrane structures consisting of silicon dioxide films synthesized by low pressure chemical vapor deposition (LPCVD) on mesoporous Vycor substrates. The ability of easily altering the composition of such films by varying the LPCVD processing parameters affords the opportunity of microengineering the pore structure by reducing the diameters of pre-existing pores in the support. The process parameters investigated include, deposition temperature, total pressure, and flow rate of oxygen. Both the kinetics and select properties of the deposits were examined. The growth rate as a function of temperature was seen to follow …