Engineering Science and Materials Commons^™

Microporous Silicon Dioxide/Vycor Membranes For Gas Separation, Justin R. Barone

Theses

This study focused on producing membranes for molecular sieving of gases by reducing the pore size of an already existing membrane structure. To do this, SiO₂ was deposited inside the pores of a Vycor tube with initial pore diameter of 4 nm. The film deposition took place by a low pressure chemical vapor deposition (LPCVD) process where diethylsilane (DES) and nitrous oxide (N₂O) were used as precursor gases. A counterflow reactant geometry was used where the precursor gases were flowed on both sides of the porous membrane. This deposition geometry gave higher selectivities and better mechanical stability. …

Fabrication Of Integrated Optic Sensor To Monitor Pollutant Concentration In Effluents, Kiran Chatty

Theses

An attempt has been made to fabricate an integrated optic sensor to monitor pollutant concentration in effluents. Optic fiber has to be coupled to the waveguide in order to send light through the waveguide. In order to facilitate the easy coupling of the fiber to the waveguide, V-grooves were formed in the silicon substrate. In order to achieve this Silicon nitride was deposited to serve as an etch mask. An attempt was made to obtain low stress silicon nitride films.

This work also attempted to synthesize the materials required to fabricate the waveguide. LPCVD processes were developed to produce undoped …

Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride Films As Low Dielectric Constant Materials, Manish Narayan

Theses

Boron nitride thin films were synthesized on Si and quartz wafers by low pressure chemical vapor deposition using borane triethylamine complex and ammonia as precursors. The films were processed at 400°C, 475°C and 550°C at a constant pressure of 0.5 Torr and at different precursor flow ratios.

The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The thickness of the film increased with increasing flow ratio, but, decreased with increasing temperature. The stresses in the film were either mildly tensile or compressive.

The least dielectric constant for the films …

Synthesis Of Boron Nitride/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Chenna Ravindranath

Theses

Since the advent of the idea of ultrafiltration, microporous membranes have come through a long way in establishing a niche as an efficient technology for gas separation applications. More and more research is aimed at reducing pore size towards nanolevels, when separation factor is the criterion rather than the permeability. This work is focused at synthesizing and characterizing microporous inorganic membranes for gas separations by molecular sieving. BN was deposited on mesoporous vycor tubes using triethylamine borane complex (TEAB) and ammonia as precursors. Effect of temperature and deposition geometry on permeability of various gases has been studied. Very high selectivities …

Low Pressure Chemical Vapor Deposition Of Tungsten As An Absorber For X-Ray Masks, Hongyu Chen

Theses

Tungsten film is one of promising materials for X-ray absorber in X-ray Lithography technology because of its high X-ray absorption and refractory properties. This study focus on CVD method to make tungsten film for X-ray absorber.

In this work, a cold wall, single wafer, Spectrum 211 CVD reactor was used for the deposition of tungsten from H, and WF6. The growth kinetics were determined as a function of temperature, pressure and flow ratio. The deposition rate of as deposited tungsten films was found to follow an Arrehnius behavior in the range of 300-500°C with an activation energy of 55.7 kJ/mol. …

Low Pressure Chemical Vapor Deposition Of Copper Films From Cu(I)(Hfac)(Tmvs), Wei-Shang King

Theses

Recently, copper has been found as a possible substitute for Al alloys because of its low resistivity (1.67 μΩ • cm) and potentially improved resistance to electromigration. Conventional physical vapor deposition (PVD) method do not provide the conformal deposition profile for the high density integrated circuit, therefore, chemical vapor deposition (CVD) has become the most promising method for the resulting conformal profile.

In this work, a cold wall, single wafer, CVD tungsten reactor was used for the deposition of copper with Cu(I)(hfac)(tmvs). Film growth rates were between 100 to 800 A/min depending on processing conditions, and an Arrhenius type activation …

Synthesis Of Silicon Oxide/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Abhijit Datta

Theses

This study is focused on development of highly selective ceramic membrane structures consisting of silicon dioxide films synthesized by low pressure chemical vapor deposition (LPCVD) on mesoporous Vycor substrates. The ability of easily altering the composition of such films by varying the LPCVD processing parameters affords the opportunity of microengineering the pore structure by reducing the diameters of pre-existing pores in the support. The process parameters investigated include, deposition temperature, total pressure, and flow rate of oxygen. Both the kinetics and select properties of the deposits were examined. The growth rate as a function of temperature was seen to follow …