Engineering Science and Materials Commons^™

Synthesis And Characterization Of Silicon Dioxide Thin Films By Low Pressure Chemical Vapor Deposition Using Ditertiarybutylsilane And Oxygen, Sung-Jun Lee

Theses

This study is focused on the synthesis and characterization of silicon dioxide thin films deposited on silicon wafers by Low Pressure Chemical Vapor Deposition (LPCVD), using ditertiarybutylsilane (DTBS) as a precursor and oxygen as the oxidant. The dependence of film growth rate on various process parameters were studied. The growth rate was found to follow an Arrhenius curve with the variation in the temperature with an activation energy of 12.6 kcal/mol. The growth rate was found to be inversely proportional to the temperature in the range 550-750 °C. The refractive index and density were observed to be close to 1.47 …

Low Pressure Chemical Vapor Deposition Of Silicon Dioxide And Phosphosilicate Glass Thin Films, Vijayalakshmi Venkatesan

Theses

Silicon dioxide thin films were synthesized on silicon and quartz wafers using Ditertiarybutylsilane(DTBS) and oxygen as precursors. Trimethylphosphite (TMP) was injected to obtain phosphosilicate glass. The films were processed at different temperatures between 700°C and 850°C at a constant pressure, and at different flow ratios of the precursors. The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The deposition rate increased with increasing temperature and with increasing TMP flow rate. The stresses were very low tensile in the case of undoped silicon dioxide film and tended towards being less …

Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride Films As Low Dielectric Constant Materials, Manish Narayan

Theses

Boron nitride thin films were synthesized on Si and quartz wafers by low pressure chemical vapor deposition using borane triethylamine complex and ammonia as precursors. The films were processed at 400°C, 475°C and 550°C at a constant pressure of 0.5 Torr and at different precursor flow ratios.

The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The thickness of the film increased with increasing flow ratio, but, decreased with increasing temperature. The stresses in the film were either mildly tensile or compressive.

The least dielectric constant for the films …