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Full-Text Articles in Engineering Science and Materials

Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann May 2003

Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann

Electrical & Computer Engineering Faculty Publications

The evolution of the band structure of β-In2 S3−3x O3x (BISO) thin films grown by physical vapor deposition, with composition x, is investigated using x-ray photoelectron spectroscopy. It is shown that the energy difference between the valence-band level and the Fermi level remains nearly constant as the optical band gap of the films increases. As a consequence, the difference between the conduction band level and the Fermi level increases as much as the optical band gap of the films. The calculation of the electronic affinity [ ] of the BISO thin films shows that it decreases linearly from 4.65 to ...


Fuzzy System Identification Based Upon A Novel Approach To Nonlinear Optimization, Raymond Scott Starsman Apr 2003

Fuzzy System Identification Based Upon A Novel Approach To Nonlinear Optimization, Raymond Scott Starsman

Electrical & Computer Engineering Theses & Disssertations

Fuzzy systems are often used to model the behavior of nonlinear dynamical systems in process control industries because the model is linguistic in nature, uses a natural-language rule set, and because they can be included in control laws that meet the design goals. However, because the rigorous study of fuzzy logic is relatively recent, there is a shortage of well-defined and understood mechanisms for the design of a fuzzy system. One of the greatest challenges in fuzzy modeling is to determine a suitable structure, parameters, and rules that minimize an appropriately chosen error between the fuzzy system, a mathematical model ...


Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac Jan 2003

Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac

Electrical & Computer Engineering Faculty Publications

γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the ...


Developing A Methodology To Detect Partial Failures For Dynamic Systems, Anwar A. Al-Jowder Jan 2003

Developing A Methodology To Detect Partial Failures For Dynamic Systems, Anwar A. Al-Jowder

Engineering Management & Systems Engineering Theses & Dissertations

The purpose of this research is to develop a decision support system that can assist in detecting partial failures in dynamic systems such as Fire Control System Tracking Radar (TR) onboard Naval Ships. Partial failures do not necessarily shut down the system immediately but cause degradation of operational performance. Previous work has shown that experts in the field of failure detection, test point insertion and Built-In-Test Equipment (BITE) can provide useful input in detecting partial failures. Partial failures affect operational system performance and support costs, which can be significant. Often, however, partial failure detection consists of the estimations and opinions ...