Engineering Science and Materials Commons^™

Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride Films As Low Dielectric Constant Materials, Manish Narayan

Theses

Boron nitride thin films were synthesized on Si and quartz wafers by low pressure chemical vapor deposition using borane triethylamine complex and ammonia as precursors. The films were processed at 400°C, 475°C and 550°C at a constant pressure of 0.5 Torr and at different precursor flow ratios.

The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The thickness of the film increased with increasing flow ratio, but, decreased with increasing temperature. The stresses in the film were either mildly tensile or compressive.

The least dielectric constant for the films …

Synthesis Of Boron Nitride/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Chenna Ravindranath

Theses

Since the advent of the idea of ultrafiltration, microporous membranes have come through a long way in establishing a niche as an efficient technology for gas separation applications. More and more research is aimed at reducing pore size towards nanolevels, when separation factor is the criterion rather than the permeability. This work is focused at synthesizing and characterizing microporous inorganic membranes for gas separations by molecular sieving. BN was deposited on mesoporous vycor tubes using triethylamine borane complex (TEAB) and ammonia as precursors. Effect of temperature and deposition geometry on permeability of various gases has been studied. Very high selectivities …