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Characterization Of Wide Band Gap Semiconductors And Multiferroic Materials, Bo Cai

Dissertations, Theses, and Capstone Projects

Structural, optical and electrical properties of zinc oxide (ZnO), aluminum nitride (AlN), and lutetium ferrite (LuFe₂O4) have been investigated. Temperature dependent Hall Effect measurements were performed between 80 and 800 K for phosphorus (P) and arsenic (As) doped ZnO thin films grown on c-plane sapphire substrate by RF magnetron sputtering. These samples exhibited n-type conductivity throughout the temperature range with carrier concentration of 3.85 × 10 ¹⁶ cm^-3 and 3.65 × 10 ¹⁷ cm^-3 at room temperature for P-doped and As-doped ZnO films, respectively. The Arrhenius plots of free electron concentration of those doped samples showed …