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Full-Text Articles in Engineering Science and Materials

Etching Process Development For Sic Cmos, Weston Reed Renfrow Aug 2022

Etching Process Development For Sic Cmos, Weston Reed Renfrow

Graduate Theses and Dissertations

Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …


Comparative Study Of Power Semiconductor Devices In A Multilevel Cascaded H-Bridge Inverter, Kenneth Mordi Dec 2018

Comparative Study Of Power Semiconductor Devices In A Multilevel Cascaded H-Bridge Inverter, Kenneth Mordi

Graduate Theses and Dissertations

This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET …


Properties Of Matter, Mike Jackson, Holly Haney Jul 2018

Properties Of Matter, Mike Jackson, Holly Haney

High School Lesson Plans

Students will investigate the relationship(s) between thermal and electrical properties of matter. First, students will use a multimeter and temperature probe to investigate the relationship between electrical resistance and temperature of an electrical resistor composed of metals. They will then graph collected data to analyze the relationship and draw a conclusion as to their relationship. They will then perform the same investigation on a thermal resistor made of a semiconducting substance and analyze that collected data. Finally, using ClaimEvidence-Reasoning (CER) structure, students will use their experimental evidence to state the similarities and differences between the electro-thermal properties of metals and …


Droplet Assisted Self-Assembly Of Semiconductor Nanostructures, Kimberly Annosha Sablon May 2009

Droplet Assisted Self-Assembly Of Semiconductor Nanostructures, Kimberly Annosha Sablon

Graduate Theses and Dissertations

There is increasing interest in quantum dot (QD) structures for a plethora of applications, including optoelectronic devices, quantum computing and energy harvesting. While strain driven surface diffusion via stranski-krastanow (SK) method has been commonly used to fabricate these structures, a more recent technique, droplet epitaxy (DE) does not require mismatch strain and is therefore much more flexible in the combination of materials utilized for the formation of QDs.

As reported in this work, a hybrid approach that combines DE and SK techniques for realizing lateral ordering of QDs was explored. First, the droplet formation of various materials was discussed and …


Development Of Low Temperature Alpha Alumina Coatings By Ac Magnetron Sputtering, Andrew Cloud May 2008

Development Of Low Temperature Alpha Alumina Coatings By Ac Magnetron Sputtering, Andrew Cloud

Mechanical Engineering Undergraduate Honors Theses

Alpha-phase aluminum oxide thin films were created using an Isoflux ICM-10 dual target inverted cylindrical magnetron sputtering system using mid-frequency AC power supplies. Alpha alumina films were deposited at a magnetron power of 6 kW, 50% oxygen partial pressure by volume, and -35 V DC bias. Film thickness, substrate material, and position and orientation within the deposition chamber were varied. To ensure the deposition conditions are suitable for alloys, the substrate temperature was measured using temperature indicating liquids. The experimental results, supported by Explicit Euler numerical analysis, revealed a steady state temperature of ~480°C at 6kW. Transmission electron microscopy (TEM) …