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2001

Faculty Publications

Articles 1 - 25 of 25

Full-Text Articles in Electrical and Computer Engineering

Localization Of Carriers And Polarization Effects In Quaternary Alingan Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur Dec 2001

Localization Of Carriers And Polarization Effects In Quaternary Alingan Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

We report on observing a long-wavelength band in low-temperature photoluminescence(PL)spectrum of quaternary Al0.22In0.02Ga0.76N/Al0.38In0.01Ga0.61N multiple quantum wells(MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PLspectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field.

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Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur Dec 2001

Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption.

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Greenland Snow Accumulation Estimates From Satellite Radar Scatterometer Data, Mark R. Drinkwater, David G. Long, Andrew W. Bingham Dec 2001

Greenland Snow Accumulation Estimates From Satellite Radar Scatterometer Data, Mark R. Drinkwater, David G. Long, Andrew W. Bingham

Faculty Publications

Data collected by the C band ERS-2 wind scatterometer (EScat), the Ku band ADEOS-1 NASA scatterometer (NSCAT), and the Ku band SeaWinds on QuikScat (QSCAT) satellite instruments are used to illustrate spatiotemporal variability in snow accumulation on the Greenland ice sheet. Microwave radar backscatter images of Greenland are derived using the scatterometer image reconstruction (SIR) method at 3-day intervals over the periods 1991–1998 and 1996–1997 for EScat and NSCAT, respectively. The backscatter coefficient σ° normalized to 40° incidence, A, and gradient in backscatter, B, in the range 20°–60° are compared with historical snow accumulation data and recent measurements …

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Stacked Subwavelength Gratings As Circular Polarization Filters, Gregory P. Nordin, P. C. Deguzman Nov 2001

Stacked Subwavelength Gratings As Circular Polarization Filters, Gregory P. Nordin, P. C. Deguzman

Faculty Publications

We have stacked subwavelength gratings (SWGs) on a single substrate to create a compact, integrated circular polarization filter. The SWGs consist of a wire grid polarizer and a broadband form-birefringent quarter-wave plate (QWP). Rigorous coupled-wave analysis was used to design the QWP for operation over the 3.5-5.0 m wavelength range. The fabricated silicon broadband QWP exhibited a phase retardance of 82-97° across this wavelength range. Two stacked structures are presented, each with a different wire grid polarizer fabricated on an organic planarization layer (SU-8) that is deposited on a QWP grating. Transmittance measurements of the first structure when illuminated with …

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Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska Oct 2001

Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska

Faculty Publications

We report on a metal–insulator–semiconductor heterostructurefield-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher …

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Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Oct 2001

Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

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Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Sep 2001

Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.

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Characterization Of Two-Dimensional Finite-Aperture Wire Grid Polarizers By A Spectral-Domain Technique, Michael A. Jensen, Gregory P. Nordin Sep 2001

Characterization Of Two-Dimensional Finite-Aperture Wire Grid Polarizers By A Spectral-Domain Technique, Michael A. Jensen, Gregory P. Nordin

Faculty Publications

We investigate the transmission characteristics of perfectly conducting two-dimensional wire grid polarizers fabricated in finite and infinite apertures using a rigorous spectral-domain mode-matching method. Specifically, the transmission coefficient for both transverse-electric and transverse-magnetic polarizations, extinction ratio, and diffraction pattern are characterized for a wide variety of geometric and material parameters including aperture dimension, conducting wire fill factor, wire spacing, polarizer thickness, material dielectric constants, and incident wave arrival angle. The results indicate that the transmission behavior is largely insensitive to aperture dimension.

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Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur Aug 2001

Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur

Faculty Publications

In this letter, we report on a material deposition scheme for quaternary AlxInyGa1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum,indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C.

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Passivity-Based Control Of Saturated Induction Motors, Levent U. Gökdere, Marwan A. Simaan, Charles W. Brice Aug 2001

Passivity-Based Control Of Saturated Induction Motors, Levent U. Gökdere, Marwan A. Simaan, Charles W. Brice

Faculty Publications

A passivity-based controller, which takes into account saturation of the magnetic material in the main flux path of the induction motor, is developed to provide close tracking of time-varying speed and flux trajectories in the high magnetic saturation regions. The proposed passivity based controller is experimentally verified. Also, a comparison between the controllers based on the saturated and nonsaturated magnetics is presented to demonstrate the benefit of the controller based on the saturated magnetics

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Electromagnetics, David V. Arnold, Richard H. Selfridge, Karl F. Warnick Jul 2001

Electromagnetics, David V. Arnold, Richard H. Selfridge, Karl F. Warnick

Faculty Publications

Many applications of electrical engineering require a knowledge of the behavior of voltages and currents in electronic devices and within conductors. In many other situations it is not enough to understand the behavior the voltages and currents in just the conductors and other components, but also the influence of the voltage and current on surrounding materials.

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Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang Jul 2001

Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.

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Fuel-Saving Strategies For Dual Spacecraft Interferometry Missions, Christopher A. Bailey, Timothy W. Mclain, Randal W. Beard Jul 2001

Fuel-Saving Strategies For Dual Spacecraft Interferometry Missions, Christopher A. Bailey, Timothy W. Mclain, Randal W. Beard

Faculty Publications

Separated spacecraft interferometry missions will require that spacecraft move in a coordinated fashion to ensure minimal and balanced consumption of fuel. This paper develops strategies for determining interferometry mission plans that result in significant fuel savings over standard approaches. Simulation results demonstrate that valuable reductions in fuel consumption can be realized by combining the retargeting and imaging maneuvers required to image multiple stellar sources. Fuel-optimal imaging strategies have been developed for two-spacecraft interferometry missions similar to the proposed StarLight mission using chained local optimization methods. Based on these strategies, sampling-pattern guidelines for space-borne interferometry missions have been developed.

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Cooperative Control Of Uav Rendezvous, Timothy W. Mclain, Phillip R. Chandler, Steven Rasmussen, Meir Pachter Jun 2001

Cooperative Control Of Uav Rendezvous, Timothy W. Mclain, Phillip R. Chandler, Steven Rasmussen, Meir Pachter

Faculty Publications

The cooperative control of timing and synchronization of tasks of multiple unmanned air vehicles (UAVs) represents a valuable capability for a wide range of potential multi-UAV missions. This research addresses the specific problem of cooperative rendezvous in which multiple UAVs are to arrive at their targets simultaneously. The development of a rendezvous manager state machine and a cooperative control decomposition approach are described. Simulation results demonstrating the feasibility of the approach are presented.

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Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska Apr 2001

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.

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Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Apr 2001

Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …

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Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala Feb 2001

Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala

Faculty Publications

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors (MESFETs) grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5×1018 cm−3 were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtained results demonstrate that the dc and microwave performance characteristics of short-channel GaN MESFETs may be comparable to those for conventional AlGaN/GaN heterostructure FETs.

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Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur Feb 2001

Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

Operation of InGaNmultiple-quantum-well(MQW)light-emitting diodes(LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQWLEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQWLEDs, making them attractive for high-power solid-state lighting applications.

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Image Reconstruction And Enhanced Resolution Imaging From Irregular Samples, David G. Long, David S. Early Feb 2001

Image Reconstruction And Enhanced Resolution Imaging From Irregular Samples, David G. Long, David S. Early

Faculty Publications

While high resolution, regularly gridded observations are generally preferred in remote sensing, actual observations are often not evenly sampled and have lower-than-desired resolution. Hence, there is an interest in resolution enhancement and image reconstruction. This paper discusses a general theory and techniques for image reconstruction and creating enhanced resolution images from irregularly sampled data. Using irregular sampling theory, we consider how the frequency content in aperture function-attenuated sidelobes can be recovered from oversampled data using reconstruction techniques, thus taking advantage of the high frequency content of measurements made with nonideal aperture filters. We show that with minor modification, the algebraic …

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A Two-Stage Decoder For Pragmatic Trellis-Coded M-Psk Modulation Using A Symbol Transformation, Robert H. Morelos-Zaragoza, Advait Mogre Jan 2001

A Two-Stage Decoder For Pragmatic Trellis-Coded M-Psk Modulation Using A Symbol Transformation, Robert H. Morelos-Zaragoza, Advait Mogre

Faculty Publications

A two-stage decoding procedure for pragmatic trellis-coded modulation (TCM) is introduced. It applies a transformation from the received I-channel and Q-channel samples onto points in a two-dimensional (2-D) signal space that contains a coset constellation. For pragmatic TCM over M-PSK signal sets with ν coded bits per symbol, ν=1, 2, the signal points in the coset constellations represent cosets of a B/QPSK signal subset-associated with the coded bits-in the original M-PSK signal constellation. A conventional Viterbi decoder operates on the transformed symbols to estimate the coded bits. After reencoding these bits, the uncoded bits are estimated in a second stage, …

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A Software Defined Radio Platform With Direct Conversion: Soprano, Shinichiro Haruyama, Robert H. Morelos-Zaragoza Jan 2001

A Software Defined Radio Platform With Direct Conversion: Soprano, Shinichiro Haruyama, Robert H. Morelos-Zaragoza

Faculty Publications

A new software defined radio platform with multiport-based direct conversion is proposed, named SOPRANO (Software Programmable and Hardware Reconfigurable Architecture for Network). The main features of SOPRANO are a high-level design methodology for digital circuits, a new mixer-less direct conversion method, and software algorithms for multi-band and multi-mode operation. We built the first prototype SOPRANO 1.0, which was able to receive PSK and QAM signals with two different carrier frequencies at 2.45 GHz and 5.25 GHz by changing signal processing software.

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A Method Of Non-Data-Aided Carrier Recovery With Modulation Identification, Robert H. Morelos-Zaragoza, Kenta Umebayashi, Ryuji Kohno Jan 2001

A Method Of Non-Data-Aided Carrier Recovery With Modulation Identification, Robert H. Morelos-Zaragoza, Kenta Umebayashi, Ryuji Kohno

Faculty Publications

A non-data aided carrier recovery technique using modulation format identification is proposed. This technique can also be interpreted as a modulation identification method that is robust against static phase and frequency offsets. The performance of the proposed technique is studied and analytical expressions derived for the mean acquisition time to detect lock in the cases of M-PSK, M=2,4,8, and 16-QAM modulation, with respect to frequency offset and signal-to-noise ratio. The results are verified with Monte Carlo simulations. The main advantage of the proposed method lies in its simpler implementation and faster lock detection, when compared to conventional methods.

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On Interference Cancellation And Iterative Techniques, Ryuji Kohno, Robert H. Morelos-Zaragoza Jan 2001

On Interference Cancellation And Iterative Techniques, Ryuji Kohno, Robert H. Morelos-Zaragoza

Faculty Publications

Recent research activities in the area of mobile radio communications have moved to third generation (3G) cellular systems to achieve higher quality with variable transmission rate of multimedia information. In this paper, an overview is presented of various interference cancellation and iterative detection techniques that are believed to be suitable for 3G wireless communications systems. Key concepts are space-time processing and space-division multiple access (or SDMA) techniques. SDMA techniques are possible with software antennas. Furthermore, to reduce receiver implementation complexity, iterative detection techniques are considered. A particularly attractive method uses tentative hard decisions, made on the received positions with the …

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Microelectronics Process Engineering: A Non-Traditional Approach To Ms&E (Ingeniería De Procesos Microelectrónicos: Un Acercamiento No Tradicional A La Ciencia De Materiales E Ingeniería), E. Allen, Stacy H. Gleixner, G. Young, David W. Parent, Yasser Dessouky, L. Vanasupa Jan 2001

Microelectronics Process Engineering: A Non-Traditional Approach To Ms&E (Ingeniería De Procesos Microelectrónicos: Un Acercamiento No Tradicional A La Ciencia De Materiales E Ingeniería), E. Allen, Stacy H. Gleixner, G. Young, David W. Parent, Yasser Dessouky, L. Vanasupa

Faculty Publications

Materials Science and Engineering straddles the fence between engineering and science. In order to produce more work-ready undergraduates, we offer a new interdisciplinary program to educate materials engineers with a particular emphasis on microelectronics-related manufacturing. The bachelor's level curriculum in Microelectronics Process Engineering (J1ProE) is interdisciplinary, drawing from materials, chemical, electrical and industrial engineering programs and tied together with courses, internships and projects which integrate thin film processing with manufacturing control methods. Our graduates are prepared for entry level engineering jobs that require knowledge and experience in microelectronics-type fabrication and statistics applications in manufacturing engineering. They also go on to …

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Multimode Quantitative Scanning Microwave Microscopy Of In Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, Jason R. Hattrick-Simpers, H. Chang Jan 2001

Multimode Quantitative Scanning Microwave Microscopy Of In Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, Jason R. Hattrick-Simpers, H. Chang

Faculty Publications

We have performed variable-temperature multimode quantitative microwavemicroscopy of in situepitaxial Ba1−xSrxTiO3 thin-film composition spreads fabricated on (100) LaA1O3 substrates. Dielectric properties were mapped as a function of continuously varying composition from BaTiO3 to SrTiO3. We have demonstrated nondestructive temperature-dependent dielectric characterization of local thin-film regions. Measurements are simultaneously taken at multiple resonant frequencies of the microscope cavity. The multimode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric relaxation in Ba1−xSrxTiO3 at microwave frequencies.

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