Open Access. Powered by Scholars. Published by Universities.®
Electrical and Computer Engineering Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Keyword
- Publication
- Publication Type
Articles 1 - 6 of 6
Full-Text Articles in Electrical and Computer Engineering
Design, Fabrication, Processing, And Testing Of Micro-Electro-Mechanical Chemical Sensors, Brian S. Freeman
Design, Fabrication, Processing, And Testing Of Micro-Electro-Mechanical Chemical Sensors, Brian S. Freeman
Theses and Dissertations
Chemical microsensors are a new field integrating chemical thin film technology with solid-state fabrication techniques to make devices capable of detecting chemicals in the environment. This thesis evaluated commercially available fabrication processes and numerous sensor designs for working chemical sensors. The commercial processes used were MUMPS for surface micromachined devices and MOSIS for bulk micromachined devices. Overall, eight fabrication runs and 29 different designs were made. Of these designs, two were shown to work effectively. Other designs failed due to fabrication problems and design errors that caused release problems. One design that worked was a surface micromachined chemoresistor with interdigitated …
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Theses and Dissertations
The p-channel In0.52Al0.48As-GaAs1-xSbx heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In0.52Al0.48As-GaAs1-xSbx p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In0.52Al0.48As-GaAs0.51Sb0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In0.52Al0.48. Third, high acceptor concentrations were obtained …
Characterization Of Cadmium Sulfide Films Deposited By Chemical Bath Method, Quazi Galib Samdami, Hameed A. Naseem, W. D. Brown
Characterization Of Cadmium Sulfide Films Deposited By Chemical Bath Method, Quazi Galib Samdami, Hameed A. Naseem, W. D. Brown
Journal of the Arkansas Academy of Science
Thin filmcadmium sulfide is a leading candidate in the fabrication of large area solar cells. The chemical bath deposition method is one of the least expensive sources for the fabrication of device quality cadmium sulfide thin films.Inthe present work, the deposition of CdS films on glass substrate from an aqueous solution containing cadmium acetate, ammonia, ammonium acetate, and thiourea are investigated. The structural properties of CdS films are characterized. Good quality thin films within 0.1 - o.5 |im thickness were obtained in30 minute deposition time, and at 70*-90*C. The films show preferential orientations. The optical transmittance of the films are …
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Electrical & Computer Engineering Faculty Publications
Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.
Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa
Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa
Journal of the Arkansas Academy of Science
Due to the extreme sensitivity of the partial elemental currents (i.e.,iCd, iTe) and, hence, stoichiometry to deposition voltage, temperature, mass transport, and ambient light intensity during electrodeposition of semiconductor films, it is important to implement in-situ methods for monitoring the stoichiometry and related semiconductor efficacy of the growing film. We report investigation of open circuit rest potential (Eoc) voltammetry as one such method during electrodeposition of CdTe from aprotic electrolytes such as ethylene glycol. Plots of transient open circuit potential versus sweep voltage exhibit distinct transition and plateau structures corresponding to Te, CdTe, and Cd phases and correlating with the …
Polishing Of Cvd-Diamond Substrates Using Reactive Ion Etching, Gopi M.R. Sirineni, Hameed A. Naseem, W. D. Brown, A. P. Malshe
Polishing Of Cvd-Diamond Substrates Using Reactive Ion Etching, Gopi M.R. Sirineni, Hameed A. Naseem, W. D. Brown, A. P. Malshe
Journal of the Arkansas Academy of Science
Multichip modules (MCM)have proved to be a viable packaging technology for achieving small size and high performance. By their nature, MCMs typically integrate multiple bare die into a module that can be the plastic or ceramic package. As a result, the MCMrequires an efficient mechanism for removing excess heat. Diamond with its excellent thermal conductivity, is the ideal choice as a substrate material for these applications. Chemical vapor deposited (CVD) diamond substrates makes possible the practical realization of a novel diamond based 3-D MCM. However, the diamond films grown by CVD technique are polycrystalline and have non-uniform filmroughness and randomly …