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Full-Text Articles in Electrical and Computer Engineering
Analysis Of Countermeasures Against Remote And Local Power Side Channel Attacks Using Correlation Power Analysis, Aurelien Tchoupou Mozipo, John M. Acken
Analysis Of Countermeasures Against Remote And Local Power Side Channel Attacks Using Correlation Power Analysis, Aurelien Tchoupou Mozipo, John M. Acken
Electrical and Computer Engineering Faculty Publications and Presentations
Countermeasures and deterrents to power side-channel attacks targeting the alteration or scrambling of the power delivery network have been shown to be effective against local attacks where the malicious agent has physical access to the target system. However, remote attacks that capture the leaked information from within the IC power grid are shown herein to be nonetheless effective at uncovering the secret key in the presence of these countermeasures/deterrents. Theoretical studies and experimental analysis are carried out to define and quantify the impact of integrated voltage regulators, voltage noise injection, and integration of on-package decoupling capacitors for both remote and …
A Time Synchronized Multi-Hop Mesh Network With Crystal-Free Nodes, Filip Maksimovic, Austin Patel, David C. Burnett, Thomas Watteyne, Kristofer S.J. Pister
A Time Synchronized Multi-Hop Mesh Network With Crystal-Free Nodes, Filip Maksimovic, Austin Patel, David C. Burnett, Thomas Watteyne, Kristofer S.J. Pister
Electrical and Computer Engineering Faculty Publications and Presentations
In this work we propose and demonstrate a protocol for a time synchronized channel hopping mesh network for wireless transceivers that use exclusively imprecise and inaccurate on-chip oscillators. This protocol is built on an IEEE 802.15.4 physical layer radio that enables interoperability with protocols such as 6TiSCH or Thread. A calibration-bootstrapped multi-hop mesh network is demonstrated with a single crystal-enabled node acting as the root. The protocol is designed to create a multi-hop mesh while compensating noisy and drifting oscillators and timers. With a 4 s synchronization period, an experimental implementation of the network maintains, in the worst case, 1.8 …
Residual Vulnerabilities To Power Side Channel Attacks Of Lightweight Ciphers Cryptography Competition Finalists, Aurelien Mozipo, John M. Acken
Residual Vulnerabilities To Power Side Channel Attacks Of Lightweight Ciphers Cryptography Competition Finalists, Aurelien Mozipo, John M. Acken
Electrical and Computer Engineering Faculty Publications and Presentations
The protection of communications between Internet of Things (IoT) devices is of great concern because the information exchanged contains vital sensitive data. Malicious agents seek to exploit those data to extract secret information about the owners or the system. Power side channel attacks are of great concern on these devices because their power consumption unintentionally leaks information correlatable to the device's secret data. Several studies have demonstrated the effectiveness of authenticated encryption with advanced data, in protecting communications with these devices. A comprehensive evaluation of the seven (out of 10) algorithm finalists of the National Institute of Standards and Technology …
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Faculty Publications
No abstract provided.
Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam
Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam
Birck and NCN Publications
Thin film dielectrics have broad applications, and the performance degradation due to charge trapping in these thin films is an important and pervasive reliability concern. It has been presumed since the 1960s that current transport in intermediate-thickness (IT) oxides (∼10–100 nm) can be described by Frenkel-Poole (FP) conduction (originally developed for ∼mm-thick films) and algorithms based on the FP theory can be used to extract defect energy levels and charging-limited lifetime. In this paper, we review the published results to show that the presumption of FP-dominated current in IT oxides is incorrect, and therefore, the methods to extract trap-depths to …
Nonresonant Detection Of Terahertz Radiation In Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel
Nonresonant Detection Of Terahertz Radiation In Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel
Faculty Publications
We present an experimental and theoretical study of nonresonant detection of subterahertz radiation in GaAs/AlGaAs and GaN/AlGaN heterostructurefield effect transistors. The experiments were performed in a wide range of temperatures (8–300 K) and for frequencies ranging from 100 to 600 GHz. The photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage. The results were interpreted using a theoretical model that shows that the maximum in photoresponse can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.
Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska
Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska
Faculty Publications
We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate …
Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska
Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska
Faculty Publications
We report on a metal–insulator–semiconductor heterostructurefield-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher …
Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications
The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …
Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications
The effect of the gate leakage current fluctuations on noiseproperties of AlGaN/GaN heterostructurefield effect transistors(HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductorheterostructurefield effect transistors (MOS-HFETs). The comparison of the noiseproperties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate currentnoise to the HFET’s output noise. The effect of the gate current fluctuations on output noiseproperties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10−3, even a …
Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska
Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska
Faculty Publications
We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.