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Electrical and Computer Engineering Faculty Publications

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Full-Text Articles in Electrical and Computer Engineering

Compositional Model Checking Of Concurrent Systems, Hao Zheng, Zhen Zhang, Chris J. Myers, Emmanuel Rodriguez, Yingying Zhang Jul 2014

Compositional Model Checking Of Concurrent Systems, Hao Zheng, Zhen Zhang, Chris J. Myers, Emmanuel Rodriguez, Yingying Zhang

Electrical and Computer Engineering Faculty Publications

This paper presents a compositional framework to address the state explosion problem in model checking of concurrent systems. This framework takes as input a system model described as a network of communicating components in a high-level description language, finds the local state transition models for each individual component where local properties can be verified, and then iteratively reduces and composes the component state transition models to form a reduced global model for the entire system where global safety properties can be verified. The state space reductions used in this framework result in a reduced model that contains the exact same …


Preserved Enzymatic Activity Of Glucose Oxidase Immobilized On Unmodified Electrodes For Glucose Detection, Gang Wang, Ngee Mei Thai, Siu-Tung Yau Apr 2007

Preserved Enzymatic Activity Of Glucose Oxidase Immobilized On Unmodified Electrodes For Glucose Detection, Gang Wang, Ngee Mei Thai, Siu-Tung Yau

Electrical and Computer Engineering Faculty Publications

Glucose sensing electrodes have been realized by immobilizing glucose oxidase (GOx) on unmodified edge plane of highly oriented pyrolytic graphite (epHOPG) and the native oxide of heavily doped silicon (SiO2/Si). Both kinds of electrode show direct interfacial electron transfer due to the redox process of the immobilized GOx. The measured formal potential of the redox process agrees with that of the native enzyme, suggesting that the immobilized GOx has retained its enzymatic activity. The electron transfer rates of the GOx immobilized electrode are 2s−1 for GOx/epHOPG electrode and 7.9s−1 for GOx/SiO2/Si electrode, which …