Electrical and Computer Engineering Commons^™

Design And Development Of Poly -(3 -Hexylthiophene) Field Effect Transistors, Fengliang Xue

Doctoral Dissertations

Organic field effect transistors (OFETs) with poly(3-hexylthiophene) (P3HT) as the active layer are developed and studied. The device characteristics are significantly affected by source/drain contact resistance, and P3HT-SiO 2 interface and the traps. These results are verified by the numerical device simulations. The temperature dependence of device mobility is studied, which indicates that the carrier transport is either heat-assisted or heat-limited at different temperature ranges. The on/off ratio and threshold voltage are found to be dependent on the temperature. Hysteresis effect due to gate electric stress is investigated. The silanol groups present at the SiO2 surface are thought to be …