Electrical and Computer Engineering Commons^™

Double-Scaled Potential Profile In A Group-Iii Nitride Alloy Revealed By Monte Carlo Simulation Of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

The temperature dependences of the peak position and width of the photoluminescence band in Al_0.1In_0.01Ga_0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.

Examination Of Focused Beam Propagation Through A Finite Non-Reciprocal Planar Chiral Slab Using Complex Fresnel Coefficients And Dual Transforms, Monish Ranjan Chatterjee, Sumit Nema, Partha P. Banerjee

Electrical and Computer Engineering Faculty Publications

Recently, uniform plane wave propagation across a nonchiral-chiral interface was examined via the development of appropriate Fresnel coefficients. In this extension, propagation of focused uniform and profiled beams through a finite, planar nonreciprocal chiral slab is investigated using complex Fresnel coefficients via angular plane wave decomposition and dual transforms.

Revisiting The Fresnel Coefficients For Uniform Plane Wave Propagation Across A Nonchiral, Reciprocal And Chiral, Nonreciprocal Interface, Monish Ranjan Chatterjee, Sumit Nema

Electrical and Computer Engineering Faculty Publications

The problem of EM wave propagation in non-reciprocal chiral media has been studied by several investigators. In a recent approach, a dual-transform technique has been developed to study the problem of such propagation under paraxial and slow-envelope variation conditions.

In this paper, we first outline some of the results obtained using the dual transform technique for arbitrary boundary conditions within the left boundary of a semi-infinite, non-reciprocal chiral medium for a uniform plane wave, and a fundamental Gaussian-profiled beam. Next, we explore the problem of a uniform EM wave incident at an oblique angle at an interface between a reciprocal, …

Time-Resolved Electroluminescence Of Algan-Based Light-Emitting Diodes With Emission At 285 Nm, M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska

Faculty Publications

We present a study on the time evolution of the electroluminescence(EL)spectra of AlGaN-based deep ultraviolet light-emitting diodes(LEDs) under pulsed current pumping. The ELspectra peaks at 285 nm and 330 nm are found to result from recombination involving band-to-band and free carriers to deep acceptor level transitions. The 330 nm long-wavelength transitions to deep acceptor levels in the p-AlGaN layer as well as the nonradiative processes significantly influence the LED internal quantum efficiency.

Digital Image Processing, Russell C. Hardie, Majeed M. Hayat

Electrical and Computer Engineering Faculty Publications

In recent years, digital images and digital image processing have become part of everyday life. This growth has been primarily fueled by advances in digital computers and the advent and growth of the Internet. Furthermore, commercially available digital cameras, scanners, and other equipment for acquiring, storing, and displaying digital imagery have become very inexpensive and increasingly powerful. An excellent treatment of digital images and digital image processing can be found in Ref. [1]. A digital image is simply a two-dimensional array of finite-precision numerical values called picture elements (or pixels). Thus a digital image is a spatially discrete (or discrete-space) …