Electrical and Computer Engineering Commons^™

Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, M. S. Shur

Faculty Publications

We report on the results of measurements of low frequency noise in n-type gallium nitride (GaN) grown on sapphire with 300 K electron mobility of 790 cm²/V s. The noise spectra have the form of 1/f noise with a Hooge parameter α of approximately 5×10⁻². This value of α is two orders of magnitude smaller than that observed before in n-GaN. The obtained results show that the level of flicker noise in GaN, just like that in GaAs and Si, strongly depends on the structural perfection of the material (the amplitude of the 1/f …