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Full-Text Articles in Electrical and Computer Engineering
A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey
A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey
Electrical & Computer Engineering Faculty Research
Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures …
Extended Permutation Filters And Their Application To Edge Enhancement, Russell C. Hardie, Kenneth E. Barner
Extended Permutation Filters And Their Application To Edge Enhancement, Russell C. Hardie, Kenneth E. Barner
Electrical and Computer Engineering Faculty Publications
Extended permutation (EP) filters are defined and analyzed. In particular, we focus on extended permutation rank selection (EPRS) filters. These filters are constrained to output an order statistic from an extended observation vector. This extended vector includes N observation samples and K statistics that are functions of the observation samples. The rank permutations from selected samples in this extended observation vector are used as the basis for selecting an order statistic output. We show that by including the sample mean in the extended observation vector, the filters exhibit excellent edge enhancement properties. We also show that several previously defined classes …
Low-Frequency Noise In 4h-Silicon Carbide Junction Field Effect Transistors, J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, Grigory Simin
Low-Frequency Noise In 4h-Silicon Carbide Junction Field Effect Transistors, J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, Grigory Simin
Faculty Publications
Low frequency noise in 4H‐silicon carbide junction field effect transistors (JFETs) has been investigated. JFETs with a buried p + n junction gate were manufactured by CREE Research Inc. Very low noise level has been observed in the JFETs. At 300 K the value of Hooge constant α is as small as α∼10−5 and the α value can be decreased by an appropriate annealing to α∼2×10−6. It has been shown that even these extremely low noise values are determined not by the volume noise sources but by the noise at the SiC–SiO2 interface.
Translation Of 'Profiles In Faith', Monish Ranjan Chatterjee
Translation Of 'Profiles In Faith', Monish Ranjan Chatterjee
Electrical and Computer Engineering Faculty Publications
Sarat Chandra Chatterjee (1876-1938) may be considered one of the three most significant figures of the literary component of the Bengal Renaissance, the other two being Bankim Chandra Chatterjee (1838-1894) and Rabindranath Tagore (1861-1941). As much as Bankim Chandra is identified with the new age in the Bengali novel, and the development of serious vernacular journalism, and Rabindranath with modern/classical movements in Bengali poetry and music, along with novel ideas in methods of education and teaching, Sarat Chandra, as a novelist and storyteller, perfected the art of narration and critical analyses of a variety of contemporaneous social and political issues, …