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Full-Text Articles in Electrical and Computer Engineering
Luminescence Mechanisms In Quaternary AlXInYGa1-X-YN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan
Luminescence Mechanisms In Quaternary AlXInYGa1-X-YN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan
Faculty Publications
Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsedmetalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and theirlinewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. We also demonstrate theluminescence properties of AlInGaN and AlGaN materials grown by a pulsed atomic-layerepitaxy and conventional MOCVD, respectively.
Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska
Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications
We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well(MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures.