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III-V photodetector

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Full-Text Articles in Electrical and Computer Engineering

Optical Tcad On The Net: A Tight-Binding Study Of Inter-Band Light Transitions In Self-Assembled Inas/Gaas Quantum Dot Photodetectors, Hoon Ryu, Dukyun Nam, Bu-Young Ahn, Jongsuk Ruth Lee, Kumwon Cho, Sunhee Lee, Gerhard Klimeck, Mincheol Sin Jan 2013

Optical Tcad On The Net: A Tight-Binding Study Of Inter-Band Light Transitions In Self-Assembled Inas/Gaas Quantum Dot Photodetectors, Hoon Ryu, Dukyun Nam, Bu-Young Ahn, Jongsuk Ruth Lee, Kumwon Cho, Sunhee Lee, Gerhard Klimeck, Mincheol Sin

Other Nanotechnology Publications

A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is introduced by carefully investigating the utility of III–V semiconductor quantum dots as infrared photodetectors at a wavelength of 1.2–1.5 μm. We not only present a detailed description of the simulation methodology coupled to the atomistic sp3d5s∗ tight-binding band model, but also validate the suggested methodology with a focus on a proof of principle on small GaAs quantum dots (QDs). Then, we move the simulation scope to optical properties of realistically sized dome-shaped InAs/GaAs QDs that are grown by self- assembly and typically contain a …