Electrical and Computer Engineering Commons^™

Experimental And Design Effort To Understand A Wider Sense Of Memory Application, Nicholas Zogbi

Discovery Undergraduate Interdisciplinary Research Internship

Magnetic Random-Access Memory (mRAM) is a more efficient, smaller, and less power-hungry memory device that can be implemented into computers. Using Magnetic Tunnel Junctions (MTJ) we store memory in devices that are far less complex than other types of memory with just the use of currents and magnetic fields changing the data.

In collaboration with the System-on-Chip Extension Technologies (SoCET) and Computing Advances by Probabilistic Spin Logic (CAPSL) groups, we have been working on using the characteristics of MTJs to characterize available commercial mRAM devices so we can have a better understanding of the thresholds of the MTJs. The SoCET …