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Full-Text Articles in Electrical and Computer Engineering
Gan Homoepitaxy On Freestanding (11̄00) Oriented Gan Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai
Gan Homoepitaxy On Freestanding (11̄00) Oriented Gan Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai
Faculty Publications
We report homoepitaxialGaNgrowth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition.Scanning electron microscopy,atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (11̄00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (11̄00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, …
Piezoelectric Doping In Alingan/Gan Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski
Piezoelectric Doping In Alingan/Gan Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski
Faculty Publications
We report on the piezoelectricdoping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H–SiC substrates. The contribution of piezoelectricdoping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. The obtained results demonstrate the potential of strain engineering and piezoelectricdoping for GaN-based electronics.