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Electrical and Computer Engineering Commons™
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Full-Text Articles in Electrical and Computer Engineering
Simulation Of Hot Electron And Quantum Effects In Algan/Gan Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang
Simulation Of Hot Electron And Quantum Effects In Algan/Gan Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang
Faculty Publications
We report on simulations of electrical characteristics of AlGaN/(InGaN)/GaN heterostructurefield effect transistors with quantum and hot electroneffects taken into account. Polarization charges lead to quantum confinement of electrons in the channel and to the formation of two-dimensional electron gas. The electron quantization leads to the spread of the electronwave function into the barrier and bulk but does not have significant impact on dc electrical characteristics.Hot electrons play an important part in the charge transport by spilling over into the bulk GaN where they are captured by traps. This leads to negative differential conductivity, which is also observed experimentally. The simulation …
Low-Temperature Operation Of Alfan Single-Quantum-Well Light-Emitting Diodes With Deep Ultraviolet Emission At 285 Nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan
Low-Temperature Operation Of Alfan Single-Quantum-Well Light-Emitting Diodes With Deep Ultraviolet Emission At 285 Nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan
Faculty Publications
We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet light-emitting diodes(LED) at temperatures from 10 to 300 K. At low bias, our data show the tunneling carrier transport to be the dominant conduction mechanism. The room-temperature performance is shown to be limited mostly by poor electron confinement in the active region and a pronounced deep level assisted recombination but not by the hole injection into the active region. At temperatures below 100 K, the electroluminescence peak intensity increases by more than one order of magnitude indicating that with a proper device design and …
Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications
The effect of the gate leakage current fluctuations on noiseproperties of AlGaN/GaN heterostructurefield effect transistors(HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductorheterostructurefield effect transistors (MOS-HFETs). The comparison of the noiseproperties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate currentnoise to the HFET’s output noise. The effect of the gate current fluctuations on output noiseproperties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10−3, even a …