Electrical and Computer Engineering Commons^™

Stress-Strain Management Of Heteroepitaxial Polycrystalline Silicon Carbide Films, Christopher William Locke

USF Tampa Graduate Theses and Dissertations

Silicon carbide (SiC) is one of the hardest known materials and is also, by good fortune, a wide bandgap semiconductor. While the application of SiC for high-temperature and high-power electronics is fairly well known, its utility as a highly robust, chemically-inert material for microelectrical mechanical systems (MEMS) is only beginning to be well recognized. SiC can be grown on both native SiC substrates or on Si using heteroepitaxial growth methods which affords the possibility to use Si micromachining methods to fabricate advanced SiC MEMS devices.

The control of film stress in heteroepitaxial silicon carbide films grown on polysilicon-on-oxide substrates has …