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The Growth And Characterization Of Inn Quantum Dots Using Droplets Epitaxy In Mbe, Malak Refaei May 2023

The Growth And Characterization Of Inn Quantum Dots Using Droplets Epitaxy In Mbe, Malak Refaei

Graduate Theses and Dissertations

III-nitride semiconductor material systems offer great potential for next-generation optoelectronic devices due to their direct bandgaps, which vary from 0.7 eV (InN) to 3.5 eV (GaN) to 6.2 eV (AlN), as well as their other unique properties. InN has gained much less attention than GaN and AlN within this family of semiconductors due to its complicated low-temperature growth. However, the prediction that an InN quantum well on GaN can become a two-dimensional (2D) topological insulator has resulted in expanding the research interest in InN. At the same time, this renewed interest has begun to reveal that the formation of an …


Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers May 2023

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers

Physics Undergraduate Honors Theses

Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …


Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi Aug 2022

Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi

Graduate Theses and Dissertations

Indium gallium nitride (In_x Ga_(1-x) N) materials have displayed great potential for photovoltaic and optoelectronic devices due to their optical and electrical properties. Properties such as direct bandgap, strong bandgap absorption, thermal stability and high radiation resistance qualify them as great materials for photovoltaic devices. The tunable bandgap which absorbs the whole solar spectrum is the most significant feature which became attractive for scientists. The bandgap for these materials varies from 0.7 eV for InN to 3.4 eV for GaN covering from infrared to ultraviolet. In_x Ga_(1-x) N wurtzite crystal is grown on GaN buffer layer by Molecular Beam Epitaxy …


Etching Process Development For Sic Cmos, Weston Reed Renfrow Aug 2022

Etching Process Development For Sic Cmos, Weston Reed Renfrow

Graduate Theses and Dissertations

Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …


Study Of Single-Photon Wave-Packets With Atomically Thin Nonlinear Mirrors, Christopher Klenke Aug 2022

Study Of Single-Photon Wave-Packets With Atomically Thin Nonlinear Mirrors, Christopher Klenke

Graduate Theses and Dissertations

A novel controlled phase gate for photonic quantum computing is proposed by exploiting the powerful nonlinear optical responses of atomically thin transition metal dichalcogenides (TMDs) and it is shown that such a gate could elicit a π-rad phase shift in the outgoing electric field only in the case of two incident photons and no other cases. Firstly, the motivation for such a gate is developed and then the implementation of monolayer TMDs is presented as a solution to previous realization challenges. The single-mode case of incident photons upon a TMD is derived and is then used to constrain the more …


Incorporation Of Zinc In Pre-Alloyed Cuin[Zn]S2/Zns Quantum Dots, Jean Carlos Morales Orocu Dec 2021

Incorporation Of Zinc In Pre-Alloyed Cuin[Zn]S2/Zns Quantum Dots, Jean Carlos Morales Orocu

Graduate Theses and Dissertations

Since the early 2000s heavy-metal-free quantum dots (QDs) such as CuInS2/ZnS have attempted to replace CdSe, their heavy-metal-containing counterparts. CuInS2/ZnS is synthesized in a two-step process that involves the fabrication of CuInS2 (CIS) nanocrystals (NCs) followed by the addition of zinc precursors. Instead of the usual core/shell architecture often exhibited by binary QDs, coating CIS QDs results in alloyed and/or partially alloyed cation-exchange (CATEX) QDs. The effect that zinc has on the properties of CIS NCs was studied by incorporating zinc during the first step of the synthesis. Different In:Cu:Zn ratios were employed in this study, maintaining a constant 4:1 …


Investigation Of Optical And Structural Properties Of Gesn Heterostructures, Oluwatobi Gabriel Olorunsola Dec 2021

Investigation Of Optical And Structural Properties Of Gesn Heterostructures, Oluwatobi Gabriel Olorunsola

Graduate Theses and Dissertations

Silicon (Si)-based optoelectronics have gained traction due to its primed versatility at developing light-based technologies. Si, however, features indirect bandgap characteristics and suffers relegated optical properties compared to its III-V counterparts. III-Vs have also been hybridized to Si platforms but the resulting technologies are expensive and incompatible with standard complementary-metal-oxide-semiconductor processes. Germanium (Ge), on the other hand, have been engineered to behave like direct bandgap material through tensile strain interventions but are well short of attaining extensive wavelength coverage. To create a competitive material that evades these challenges, transitional amounts of Sn can be incorporated into Ge matrix to form …


Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval Jul 2021

Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval

Graduate Theses and Dissertations

The research conducted in this dissertation is focused on developing modeling approaches for analyzing high-frequency transistors and present solutions for optimizing the device output power and gain. First, a literature review of different transistor types utilized in high-frequency regions is conducted and gallium nitride high electron mobility transistor is identified as the promising device for these bands. Different structural configurations and operating modes of these transistors are explained, and their applications are discussed. Equivalent circuit models and physics-based models are also introduced and their limitations for analyzing the small-signal and large-signal behavior of these devices are explained. Next, a model …


Fabrication And Characterization Of Photodetector Devices Based On Nanostructured Materials: Graphene And Colloidal Nanocrystals, Wafaa Gebril Jul 2021

Fabrication And Characterization Of Photodetector Devices Based On Nanostructured Materials: Graphene And Colloidal Nanocrystals, Wafaa Gebril

Graduate Theses and Dissertations

Photodetectors are devices that capture light signals and convert them into electrical signals. High performance photodetectors are in demand in a variety of applications, such as optical communication, security, and environmental monitoring. Among many appealing nanomaterials for novel photodetection devices, graphene and semiconductor colloidal nanocrystals are promising candidates because of their desirable and unique properties compared to conventional materials.

Photodetector devices based on different types of nanostructured materials including graphene and colloidal nanocrystals were investigated. First, graphene layers were mechanically exfoliated and characterized for device fabrication. Self-powered few layers graphene phototransistors were studied. At zero drain voltage bias and room …


Investigation Of Membrane Based Processes For Biomedical Applications, Efecan Pakkaner Jul 2021

Investigation Of Membrane Based Processes For Biomedical Applications, Efecan Pakkaner

Graduate Theses and Dissertations

As substantial developments were achieved in nanotechnology and polymer engineering, especially in the last few decades, the use of membranes and membrane-based procedures was found to be expanding into more and more research and development areas; including biological engineering, life sciences and biomedical engineering. Not only have they been the main focus of meaningful research, but they have also been the main pieces of the solutions to very thorny problems encountered within a wide range of applications from microfluidics to water treatment, thanks to their versatility, cost-effectiveness and biocompatibility, when compared to conventional separation techniques. To celebrate and embrace these …


Direct Torque Control For Silicon Carbide Motor Drives, Mohammad Hazzaz Mahmud Jul 2021

Direct Torque Control For Silicon Carbide Motor Drives, Mohammad Hazzaz Mahmud

Graduate Theses and Dissertations

Direct torque control (DTC) is an extensively used control method for motor drives due to its unique advantages, e.g., the fast dynamic response and the robustness against motor parameters variations, uncertainties, and external disturbances. Using higher switching frequency is generally required by DTC to reduce the torque ripples and decrease stator current total harmonic distortion (THD), which however can lower the drive efficiency. Through the use of the emerging silicon carbide (SiC) devices, which have lower switching losses compared to their silicon counterparts, it is feasible to achieve high efficiency and low torque ripple simultaneously for DTC drives.

To overcome …


Electrochemical Deposition In Energy Storage Devices, Witness Atutala Martin Jul 2021

Electrochemical Deposition In Energy Storage Devices, Witness Atutala Martin

Graduate Theses and Dissertations

Metals, whether in a solid or soluble ion form, are a vital part of any electrochemical storage system. More so, Li metal is widely considered as the ideal anode because of its low density and low electrochemical potential (-3.04 V vs. the standard hydrogen electrode – SHE). However, just like most metals, it does not plate or strip evenly during cycling which can lead to cycling performance issues, short cycling lifespans, and even safety concerns brought about by dendrites that can cause internal short-circuiting within cells. This research focused on investigating the electroplating of metals in both aqueous and non-aqueous …


Oxone® Mediated Tempo-Oxidized Cellulose Nanomaterials: Material Characterization, Ultrafiltration Membrane Separations, And Thin Film Composite Gas Transport Analysis, John Phillips Moore May 2021

Oxone® Mediated Tempo-Oxidized Cellulose Nanomaterials: Material Characterization, Ultrafiltration Membrane Separations, And Thin Film Composite Gas Transport Analysis, John Phillips Moore

Graduate Theses and Dissertations

Cellulose nanomaterials (CNMs) are derived from plant matter and are comprised of nanoscopic cellulose crystals and fibers. They have a diverse set of applications, from cosmetics to oil recovery. This study focuses on the properties of Oxone® mediated TEMPO-oxidized cellulose nanomaterials (OTO-CNMs) and their use in controlling the transport properties of polymeric substrates. Synthesis and characterization of cellulosic nanoparticles have resulted in the creation of OTO-CNMs with properties that increase hydrophilicity. With added hydrophilicity, OTO-CNMs possess lower fouling propensity, making them ideal membrane additive for transport limited separations such as hemodialysis.

To utilize the material and unique properties thereof, this …


Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker May 2021

Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker

Electrical Engineering Undergraduate Honors Theses

The goal of the project was to design and fabricate a bandpass filter with a center frequency of 25GHz with a 2GHz bandwidth. The first step was to do the calculation to design a bandpass filter to meet these specifications along with the properties of the DupontTM GreenTapeTM 9K7. HFSS was then used to verify the results from the initial calculations. There was a significant error between the two results, so more tweaking was done to the calculations to get a better center frequency. After a final design was decided, the fabrication process started. Low-Temperature Co-Fired Ceramics (LLTC) …


Performance And Economics Of Solar Inverters And Module Level Power Electronics In A 1 Mw Photovoltaic System, Maxwell Criswell May 2021

Performance And Economics Of Solar Inverters And Module Level Power Electronics In A 1 Mw Photovoltaic System, Maxwell Criswell

Biological and Agricultural Engineering Undergraduate Honors Theses

Photovoltaic solar panels convert sunlight to electricity in the form of direct current; therefore, a necessary component of every photovoltaic system is an inverter to convert the electricity to usable alternating current. There are various commercially available inverter technologies manufactured today such as microinverters, string inverters, and central inverters, as well as module level power electronic devices such as DC optimizers that are capable of improving system performance in string and central inverter systems. This thesis compares the performance and economics of five different inverter and module level power electronic systems through model simulation using Helioscope software. The five alternatives …


Design And Control Of A Peristaltic Pump To Simulate Left Atrial Pressure In A Conductive Silicone Model, Jeremy Collins May 2021

Design And Control Of A Peristaltic Pump To Simulate Left Atrial Pressure In A Conductive Silicone Model, Jeremy Collins

Mechanical Engineering Undergraduate Honors Theses

According to the CDC, atrial fibrillation is responsible for more than 454,000 hospitalizations and approximately 158,000 deaths per year. A common treatment for atrial fibrillation is catheter ablation, a process in which a long flexible tube is guided through the femoral artery and to the source of arrhythmia in the heart, where it measures the electrical potential at various locations and converts problematic heart tissue to scar tissue via ablation. This paper details the design and control of a low-cost ($400) peristaltic pump system using repetitive control to replicate blood pressure in the left atrium in a conductive silicone model …


Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu May 2021

Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu

Graduate Theses and Dissertations

Germanium-tin alloys with Sn compositions higher than 8 at. % to 10 at. % have recently attracted significant interest as a group IV semiconductor that is ideal for active photonics on a Si substrate. The interest is due to the fact that while at a few percent of Sn, GeSn is an indirect bandgap semiconductor, at about 8 to 10 at. % Sn, GeSn transitions to a direct bandgap semiconductor. This is at first surprising since the solid solubility of Sn in Ge under equilibrium growth conditions is limited to only about 1 at. %. However, under non-equilibrium growth conditions, …


Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran May 2021

Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran

Graduate Theses and Dissertations

Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …


Design, Fabrication, And Reliability Effects Of Additively Manufactured First Level Compliant Interconnects For Microelectronics Application, Tumininu David Olatunji Dec 2020

Design, Fabrication, And Reliability Effects Of Additively Manufactured First Level Compliant Interconnects For Microelectronics Application, Tumininu David Olatunji

Graduate Theses and Dissertations

Semiconductor packaging and development is greatly dependent on the magnitude of interconnect and on-chip stress that ultimately limits the reliability of electronic components. Thermomechanical related strains occur because of the coefficient of thermal expansion mismatch from different conjoined materials being assembled to manufacture a device. To curb the effect of thermal expansion mismatch between conjoined parts, studies have been done in integrating compliant structures between dies, solder balls, and substrates. Initial studies have enabled the design and manufacturing of these structures using a photolithography approach which involves a high number of fabrication steps depending on the complexity of the structures …


Fourier Transform Infrared Spectroscopy For The Measurement Of Gesn/(Si)Gesn, Solomon Opeyemi Ojo Dec 2020

Fourier Transform Infrared Spectroscopy For The Measurement Of Gesn/(Si)Gesn, Solomon Opeyemi Ojo

Graduate Theses and Dissertations

Photoluminescence (PL) and Electroluminescence (EL) characterization techniques are important tools for studying the optical and electrical properties of (Si)GeSn. Light emission from these PL and EL measurements provides relevant information on material quality, bandgap energy, current density, and device efficiency. Prior to this work, the in-house PL set-up of this lab which involves the use of a commercially-obtained dispersive spectrometer was used for characterizing both GeSn thin film and fabricated devices, but these measurements were limited by issues bordering on low spectral resolution, spectral artifacts, and poor signal-to-noise ratio (SNR) thereby resulting in the possible loss of vital information and …


High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan Dec 2020

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …


Growth And Characterization Of Semiconductor Materials And Devices For Extreme Environments Applications, Abbas Sabbar Dec 2020

Growth And Characterization Of Semiconductor Materials And Devices For Extreme Environments Applications, Abbas Sabbar

Graduate Theses and Dissertations

Numerous industries require electronics to operate reliably in harsh environments, such as extreme high temperatures (HTs), low temperature (LT), radiation rich environments, multi-extreme, etc. This dissertation is focused on two harsh environments: HT and multi-extreme.

The first study is on HT optoelectronics for future high-density power module applications. In the power modules design, galvanic isolation is required to pass through the gate control signal, reject the transient noise, and break the ground loops. The optocoupler, which consists of a lighting emitting diode (LED) and photodetector (PD), is commonly used as the solution of galvanic isolation at room temperatures. There is …


Synthesis And Application Of Ceramic Paste For High-Temperature Electronic Packaging, Ardalan Nasiri Jul 2020

Synthesis And Application Of Ceramic Paste For High-Temperature Electronic Packaging, Ardalan Nasiri

Graduate Theses and Dissertations

This dissertation research focused on the synthesis and application of ceramic paste for high-temperature applications. An alumina paste material comprising aluminum dihydric phosphate and alumina powder was developed for high-temperature electronic packaging. Nano aluminum nitride and nano-silica powders were embedded to promote the paste curing process, limit the grain growth, and increase its bond shear strength. The chip-to-substrate bond strength was enhanced and met the MIL-STD requirements for die-attach assembly. Its encapsulation property was improved with fewer cracks compared to similar commercial ceramic encapsulants. The die-attach material and encapsulation properties tested at 500°C showed no defect or additional cracks. Thermal …


Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao Aug 2019

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …


Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor Aug 2019

Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor

Graduate Theses and Dissertations

Over the last decade, the evolution of the global consciousness in response to decreasing environmental conditions from global warming and pollution has led to an outcry for finding new alternative/clean methods for harvesting energy and determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by its alloys (0.7eV-6.2eV) best illustrates the versatility of III-nitride materials. This wide range has enabled applications extending from the ultraviolet to the near …


Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant May 2019

Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant

Graduate Theses and Dissertations

The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …


A Silicon Germanium Cmos Linear Voltage Regulator For Wireless Agricultural Applications, Aminta Naidili Castillo Robles May 2019

A Silicon Germanium Cmos Linear Voltage Regulator For Wireless Agricultural Applications, Aminta Naidili Castillo Robles

Graduate Theses and Dissertations

This thesis presents the design, simulation and test results of a silicon germanium (SiGe) complementary metal-oxide-semiconductor (CMOS) linear regulator. The objective of the circuit is to power other analog devices regardless of the load current and input voltage changes. The application of this regulator is to be part of a project developing a miniaturized semiconductor platform that can be inserted into stems of crops in order to measure data inside the plant and then send it wirelessly to the user. The linear regulator was designed on a BiCMOS SiGe 0.13µm which is a GlobalFoundries process. It has been tested at …


Plasmonic Properties Of Nanoparticle And Two Dimensional Material Integrated Structure, Desalegn Tadesse Debu May 2019

Plasmonic Properties Of Nanoparticle And Two Dimensional Material Integrated Structure, Desalegn Tadesse Debu

Graduate Theses and Dissertations

Recently, various groups have demonstrated nano-scale engineering of nanostructures for optical to infrared wavelength plasmonic applications. Most fabrication technique processes, especially those using noble metals, requires an adhesion layer. Previously proposed theoretical work to support experimental measurement often neglect the effect of the adhesion layers. The first finding of this work focuses on the impact of the adhesion layer on nanoparticle plasmonic properties. Gold nanodisks with a titanium adhesion layer are investigated by calculating the scattering, absorption, and extinction cross-section with numerical simulations using a finite difference time domain (FDTD) method. I demonstrate that a gold nanodisk with an adhesive …


Bgaas Alloy Semiconductors For Lasers On Silicon, Joshua Mcarthur May 2019

Bgaas Alloy Semiconductors For Lasers On Silicon, Joshua Mcarthur

Mechanical Engineering Undergraduate Honors Theses

In the world of semiconductors today, there is a large dissonance between optical devices and electrical application. Due to the limitations of electron transport, photonic integrated circuits are soon-to-be vital in fields like telecommunications and sensing. Right now, these PIC’s are mostly made from indium phosphide. Due to its ubiquitous nature, however, there is a huge push to integrate efficient optics with silicon. It’s cheap, abundant, dope-able, and our electronic infrastructure is based on it. The reason why silicon photonics aren’t already commercialized is because of silicon’s indirect bandgap—it is inefficient with optical applications. The problem with combining direct gap …


Methods To Remotely Eliminate Biofilm From Medical Implants Using 2.4 Ghz Microwaves, Brett Glenn May 2019

Methods To Remotely Eliminate Biofilm From Medical Implants Using 2.4 Ghz Microwaves, Brett Glenn

Mechanical Engineering Undergraduate Honors Theses

Infections associated with biofilm growth are usually challenging to eradicate due to their high tolerance toward antibiotics [11, 12]. Biofilms often form on the inert surfaces of medically implanted devices [13]. No matter the sophistication, microbial infections can develop on all medical devices and tissue engineering constructs [12]. Related infections lead to 2 million cases annually in the U.S., costing the healthcare system over $5 billion in additional healthcare expenses [12].

Novel solutions to biofilm’s microbial colonization span the spectrum of engineering and science disciplines. Yet a practical solution still does not exist. The research presented here will explore a …