Electrical and Computer Engineering Commons^™

Improving Methods Of Doping On Black Phosphorus, Yuqin Duan, Adam Charnas, Jingkai Qin, Peide Ye

The Summer Undergraduate Research Fellowship (SURF) Symposium

Black phosphorus (BP) is a 2D semiconducting material with high carrier mobility. It is usually p-type due to oxidation states near its valence band. Although achieved through other growth methods, n-type doping has not yet been accomplished through the modern chemical vapor transport (CVT) growth method. To address this issue, small amounts of tellurium were added to Red Phosphorus to act as a dopant during the CVT growth process in addition to tin(Sn) and tin(IV) iodide, which facilitate growth. The chemicals are heated up to 600°C and precisely cooled in a 21-hour process, during which BP crystals should form. After …