Electrical and Computer Engineering Commons^™

Ultrafast Electron Diffraction Study Of The Dynamics Of Antimony Thin Films And Nanoparticles, Mahmoud Abdel-Fattah

Electrical & Computer Engineering Theses & Dissertations

The ultrafast fast phenomena that take place following the application of a 120 fs laser pulse on 20 nm antimony thin films and 40 nm nanoparticles were studied using time-resolved electron diffraction. Samples are prepared by thermal evaporation, at small thickness (< 10 nm) antimony nanoparticles form while at larger thicknesses we get continuous thin films.

The samples are annealed and studied by static heating to determine their Debye temperatures, which were considerably less than the standard value. The thermal expansion under static heating also yielded the expansion coefficient of the sample material. Nanoparticle samples gave a very accurate thermal expansion coefficient (11 × 10^-6 K^-1).

Ultrafast time resolved electron diffraction …

Analysis Of Interband, Intraband, And Plasmon Polariton Transitions In Silver Nanoparticle Films Via In Situ Real-Time Spectroscopic Ellipsometry, S. A. Little, R. W. Collins, S. Marsillac

Electrical & Computer Engineering Faculty Publications

The dielectric function of Ag nanoparticle films, deduced from an analysis of in situ real-time spectroscopic ellipsometry (RTSE) measurements, is found to evolve with time during deposition in close consistency with the film structure, deduced in the same RTSE analysis. In the nucleation regime, the intraband dielectric function component is absent and plasmon polariton behavior dominates. Only at nuclei contact, does the intraband amplitude appear, increasing above zero. Both intraband and plasmon amplitudes coexist during surface smoothening associated with coalescence. The intraband relaxation time increases rapidly after surface smoothening is complete, also in consistency with the thin film structural evolution.

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …

Precise Control Of Highly Ordered Arrays Of Nested Semiconductor/Metal Nanotubes, Diefeng Gu, Helmut Baumgart, Kandabara Tapily, Pragya Shrestha, Gon Namkoong, Xianyu Ao, Frank Müller

Electrical & Computer Engineering Faculty Publications

Lithographically defined microporous templates in conjunction with the atomic layer deposition (ALD) technique enable remarkable control of complex novel nested nanotube structures. So far three-dimensional control of physical process parameters has not been fully realized with high precision resolution, and requires optimization in order to achieve a wider range of potential applications. Furthermore, the combination of composite insulating oxide layers alternating with semiconducting layers and metals can provide various types of novel applications and eventually provide unique and advanced levels of multifunctional nanoscale devices. Semiconducting TiO₂ nanotubes have potential applications in photovoltaic devices. The combination of nanostructured semiconducting materials …

Low Temperature Epitaxial Growth Of Ge Quantum Dot On Si (100) - (2×1) By Femtosecond Laser Excitation, Ali Oguz Er, Wei Ren, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Low temperature epitaxy of Ge quantum dots on Si (100) - (2×1) by femtosecond pulsed laser deposition under femtosecond laser excitation was investigated. Reflection high-energy electron diffraction and atomic force microscopy were used to analyze the growth mode and morphology. Epitaxial growth was achieved at ∼70 °C by using femtosecond laser excitation of the substrate. A purely electronic mechanism of enhanced surface diffusion of the Ge adatoms is proposed. © 2011 American Institute of Physics. [doi:10.1063/1.3537813]