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Full-Text Articles in Computer Engineering
Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe
Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe
Makara Journal of Technology
As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between …
Preparations Of Nanostructured Silicide Bundles And Oxide Arrays, Hirokazu Tatsuoka, Wen Li, Erchao Meng, Daisuke Ishikwa, Kaito Nakane, Shingo Oda, Tomoji Matsushita, Natsuki Kurebayashi
Preparations Of Nanostructured Silicide Bundles And Oxide Arrays, Hirokazu Tatsuoka, Wen Li, Erchao Meng, Daisuke Ishikwa, Kaito Nakane, Shingo Oda, Tomoji Matsushita, Natsuki Kurebayashi
Makara Journal of Technology
A variety of nanostructured silicide bundles and oxide nanowire arrays with abundant, non-toxic materials we are prepared. The CrSi2 nanowire and Mg2Si/MgO composite nanowire bundles were synthesized using a Si substrate and a SiOx nanofiber bundle, respectively. The hexagonal MoSi2 nanosheet bundles were also synthesized using a MoS2 layered material as a template. In addition, ZnO, CuO/Cu2O and a-Fe2O3 nanowire arrays were prepared on semiconductor or metallic substrates. The growth phenomena and the structural properties of the nanostructured materials awere investigated. In addition, the preparations of axial and radial nanowire structures weare examined.