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Full-Text Articles in Computer Engineering

Projection-Based Image Registration In The Presence Of Fixed-Pattern Noise, Ernest Armstrong, Stephen C. Cain, Majeed M. Hayat Dec 2001

Projection-Based Image Registration In The Presence Of Fixed-Pattern Noise, Ernest Armstrong, Stephen C. Cain, Majeed M. Hayat

Electrical and Computer Engineering Faculty Research and Publications

A computationally efficient method for image registration is investigated that can achieve an improved performance over the traditional two-dimensional (2-D) cross-correlation-based techniques in the presence of both fixed-pattern and temporal noise. The method relies on transforming each image in the sequence of frames into two vector projections formed by accumulating pixel values along the rows and columns of the image. The vector projections corresponding to successive frames are in turn used to estimate the individual horizontal and vertical components of the shift by means of a one-dimensional (1-D) cross-correlation-based estimator. While gradient-based shift estimation techniques are computationally efficient, they often …


Locating Target At High Speed Using Image Decimation Decomposition Processing, Zikuan Chen, Mohammad Rezaul Karim, Majeed M. Hayat Mar 2001

Locating Target At High Speed Using Image Decimation Decomposition Processing, Zikuan Chen, Mohammad Rezaul Karim, Majeed M. Hayat

Electrical and Computer Engineering Faculty Research and Publications

We develop a decimation-decomposition processing technique that consists of judiciously selecting certain decimation-decomposed components of an image and then performing inter-component processing. For a (kx,ky)-decimation decomposition, there may be up to kxky decimation-decomposed components. The minimal surviving and maximal non-surviving lengths associated with inter-component processing algorithm allows for clutter suppression. By removing detection redundancies, one can locate the target at high speed. A “where-then-what” model is proposed for target tracking and recognition. It locates the target by-image decimation-decomposition processing first and then recognizes the target in question using a suitable image recognition technique.


Impact-Ionization And Noise Characteristics Of Thin Iii-V Avalanche Photodiodes, Mohammad A. Saleh, Majeed M. Hayat, Paul P. Sotirelis, Archie L. Holmes, Joe C. Campbell, Bahaa E.A. Saleh, Malvin Carl Teich Jan 2001

Impact-Ionization And Noise Characteristics Of Thin Iii-V Avalanche Photodiodes, Mohammad A. Saleh, Majeed M. Hayat, Paul P. Sotirelis, Archie L. Holmes, Joe C. Campbell, Bahaa E.A. Saleh, Malvin Carl Teich

Electrical and Computer Engineering Faculty Research and Publications

It is, by now, well known that McIntyre's localized carrier-multiplication theory cannot explain the suppression of excess noise factor observed in avalanche photodiodes (APDs) that make use of thin multiplication regions. We demonstrate that a carrier multiplication model that incorporates the effects of dead space, as developed earlier by Hayat et al. provides excellent agreement with the impact-ionization and noise characteristics of thin InP, In/sub 0.52/Al/sub 0.48/As, GaAs, and Al/sub 0.2/Ga/sub 0.8/As APDs, with multiplication regions of different widths. We outline a general technique that facilitates the calculation of ionization coefficients for carriers that have traveled a distance exceeding the …


Breakdown Voltage In Thin Iii-V Avalanche Photodiodes, Mohammad A. Saleh Jan 2001

Breakdown Voltage In Thin Iii-V Avalanche Photodiodes, Mohammad A. Saleh

Electrical and Computer Engineering Faculty Research and Publications

  1. The dead-space multiplication theory of Hayat et al. [Journal of Lightwave Technology 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0:52Al0:48As, and Al0:2Ga0:8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.