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Full-Text Articles in Computer Engineering
Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat
Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat
Electrical & Computer Engineering Faculty Research
A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.