Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 5 of 5
Full-Text Articles in Computer Engineering
Thermal Management Using Mems Bimorph Cantilever Beams, Ronald A. Coutu Jr., R. S. Lafleur, J. P.K. Walton, Lavern A. Starman
Thermal Management Using Mems Bimorph Cantilever Beams, Ronald A. Coutu Jr., R. S. Lafleur, J. P.K. Walton, Lavern A. Starman
Electrical and Computer Engineering Faculty Research and Publications
This paper examines a passive cooling technique using microelectromechanical systems (MEMS) for localized thermal management of electronic devices. The prototype was designed using analytic equations, simulated using finite element methods (FEM), and fabricated using the commercial PolyMUMPs™ process. The system consisted of an electronic device simulator (EDS) and MEMS bimorph cantilever beams (MBCB) array with beams lengths of 200, 250, and 300 μm that were tested to characterize deflection and thermal behavior. The specific beam lengths were chosen to actuate in response to heating associated with the EDS (i.e. the longest beams actuated first corresponding to the hottest portion of …
Surface Feature Engineering Through Nanosphere Lithography, Tod V. Laurvick, Ronald A. Coutu Jr., James M. Sattler, Robert A. Lake
Surface Feature Engineering Through Nanosphere Lithography, Tod V. Laurvick, Ronald A. Coutu Jr., James M. Sattler, Robert A. Lake
Electrical and Computer Engineering Faculty Research and Publications
How surface geometries can be selectively manipulated through nanosphere lithography (NSL) is discussed. Self-assembled monolayers and multilayers of nanospheres have been studied for decades and have been applied to lithography for almost as long. When compared to the most modern, state-of-the-art techniques, NSL offers comparable feature resolution with many advantages over competing technologies. Several high-resolution alternatives require scan-based implementation (i.e., focused ion beams and e-beam lithography) while NSL is much more of a batch operation, allowing for full wafer or possibly even multiple wafer processing, potentially saving time and increasing throughput in a manufacturing environment. Additionally, NSL has continued to …
Srrs Embedded With Mems Cantilevers To Enable Electrostatic Tuning Of The Resonant Frequency, E. A. Moore, Derrick Langley, Matthew E. Jussaume, L. A. Rederis, C. A. Lundell, Ronald A. Coutu Jr., Peter J. Collins, Lavern A. Starman
Srrs Embedded With Mems Cantilevers To Enable Electrostatic Tuning Of The Resonant Frequency, E. A. Moore, Derrick Langley, Matthew E. Jussaume, L. A. Rederis, C. A. Lundell, Ronald A. Coutu Jr., Peter J. Collins, Lavern A. Starman
Electrical and Computer Engineering Faculty Research and Publications
A microelectromechanical systems (MEMS) cantilever array was monolithically fabricated in the gap region of a split ring resonator (SRR) to enable electrostatic tuning of the resonant frequency. The design consisted of two concentric SRRs each with a set of cantilevers extending across the split region. The cantilever array consisted of five beams that varied in length from 300 to 400 μm, with each beam adding about 2 pF to the capacitance as it actuated. The entire structure was fabricated monolithically to reduce its size and minimize losses from externally wire bonded components. The beams actuate one at a time, longest …
Novel Microelectromechanical Systems Image Reversal Fabrication Process Based On Robust Su-8 Masking Layers, Scott A. Ostrow Ii, Ronald A. Coutu Jr.
Novel Microelectromechanical Systems Image Reversal Fabrication Process Based On Robust Su-8 Masking Layers, Scott A. Ostrow Ii, Ronald A. Coutu Jr.
Electrical and Computer Engineering Faculty Research and Publications
This paper discusses a novel fabrication process that uses a combination of negative and positive photoresists with positive tone photomasks, resulting in masking layers suitable for bulk micromachining high-aspect ratio microelectromechanical systems (MEMS) devices. MicroChem's negative photoresist Nano™ SU-8 and Clariant's image reversal photoresist AZ 5214E are utilized, along with a barrier layer, to effectively convert a positive photomask into a negative image. This technique utilizes standard photolithography chemicals, equipment, and processes, and opens the door for creating complementary MEMS structures without added fabrication delay and cost. Furthermore, the SU-8 masking layer is robust enough to withstand aggressive etch chemistries …
Micro-Switches With Sputtered Au, Aupd, Au-On-Aupt, And Auptcu Alloy Electric Contacts, Ronald A. Coutu Jr., P. E. Kladitis, R. Cortez, R. E. Strawser, Robert L. Crane
Micro-Switches With Sputtered Au, Aupd, Au-On-Aupt, And Auptcu Alloy Electric Contacts, Ronald A. Coutu Jr., P. E. Kladitis, R. Cortez, R. E. Strawser, Robert L. Crane
Electrical and Computer Engineering Faculty Research and Publications
This work is the first to report on a new analytic model for predicting micro-contact resistance and the design, fabrication, and testing of microelectromechanical systems (MEMS) metal contact switches with sputtered bi-metallic (i.e. gold (Au)-on-Au-platinum (Pt), (Au-on-Au-(6%)Pt)), binary alloy (i.e. Au-palladium (Pd), (Au-(2%)Pd)), and tertiary alloy (i.e. Au-Pt-copper (Cu), (Au-(5%)Pt-(0.5%)Cu)) electric contacts. The micro-switches with bi-metallic and binary alloy contacts resulted in contact resistance between 1-2 /spl Omega/ and, when compared to micro-switches with sputtered Au electric contacts, exhibited a 3.3 and 2.6 times increase in switching lifetime, respectively. The tertiary alloy exhibited a 6.5 times increase in switch lifetime …