Computer Engineering Commons^™

Managing And Leveraging Variations And Noise In Nanometer Cmos, Vikram B. Suresh

Doctoral Dissertations

Advanced CMOS technologies have enabled high density designs at the cost of complex fabrication process. Variation in oxide thickness and Random Dopant Fluctuation (RDF) lead to variation in transistor threshold voltage V_th. Current photo-lithography process used for printing decreasing critical dimensions result in variation in transistor channel length and width. A related challenge in nanometer CMOS is that of on-chip random noise. With decreasing threshold voltage and operating voltage; and increasing operating temperature, CMOS devices are more sensitive to random on-chip noise in advanced technologies. In this thesis, we explore novel circuit techniques to manage the impact of …