Computer Engineering Commons^™

Hfo2 As Gate Dielectric On Si And Ge Substrate, Reenu Garg

Dissertations

Hafnium oxide HfO₂ has been considered as an alternative to silicon dioxide SiO₂ in future nano-scale complementary metal-oxide-semiconductor (CMOS) devices since it provides the required capacitance at the reduced device size because of its high dielectric constant. HfO₂ films are currently deposited by various techniques. Many of them require high temperature annealing that can impact device performance and reliability.

In this research, electrical characteristics of capacitors with HfO₂ as gate dielectric deposited by standard thermal evaporation and e-beam evaporation on Si and Ge substrates were investigated. The dielectric constant of HfO₂ deposited by thermal evaporation …